Photoluminescence of HgCdTe nanostructures grown by molecular beam epitaxy on GaAs

• Autorzy: Izhnin I. I. , Izhnin A. I. , Mynbaev K. D. , Bazhenov N. L. , Shilyaev A. V. , Mikhailov N. N. , Varavin V. S. , Dvoretsky S. A. , Fitsych O. I. , Voitsekhovsky A. V.

Identyfikatory

DOI

10.2478/s11772-013-0103-9

• Języki publikacji: EN

Abstrakty

EN

Photoluminescence (PL) of HgCdTe-based hetero-epitaxial nanostructures with 50 to 1100 nm-wide potential wells was studied. The nanostructures were grown by molecular beam epitaxy on GaAs substrates. A strong degree of alloy disorder was found in the material, which led to the broadening of the PL spectra and a considerable Stokes shift that could be traced up to temperature T~230 K. Annealing of the structures improved the ordering and led to the increase in the PL intensity. A remarkable feature of the PL was an unexpectedly small decrease of its intensity with temperature increasing from 84 to 300 K. This effect can be related to localization of carriers at potential fluctuations and to the specific character of Auger-type processes in HgCdTe-based nanostructures.

Słowa kluczowe

EN

nanostructures; molecular beam epitaxy; HgCdTe; photoluminescence

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2013
• Tom: Vol. 21, No. 4
• Strony: 390--394
• Opis fizyczny: Bibliogr. 24 poz., wykr.

Twórcy

autor

Izhnin I. I.

• R&D Institute for Materials SRC “Carat”, 202 Stryjska St., 79031 Lviv, Ukraine

autor

Izhnin A. I.

• R&D Institute for Materials SRC “Carat”, 202 Stryjska St., 79031 Lviv, Ukraine

autor

Mynbaev K. D.

• Ioffe Physical-Technical Institute of RAS, 26 Polytechnicheskaya St., 194021 St.-Petersburg, Russia

autor

Bazhenov N. L.

• Ioffe Physical-Technical Institute of RAS, 26 Polytechnicheskaya St., 194021 St.-Petersburg, Russia

autor

Shilyaev A. V.

• Ioffe Physical-Technical Institute of RAS, 26 Polytechnicheskaya St., 194021 St.-Petersburg, Russia

autor

Mikhailov N. N.

• A. V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of RAS, 13 ac. Lavrentieva St., 630090 Novosibirsk, Russia

autor

Varavin V. S.

• A. V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of RAS, 13 ac. Lavrentieva St., 630090 Novosibirsk, Russia

autor

Dvoretsky S. A.

• A. V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of RAS, 13 ac. Lavrentieva St., 630090 Novosibirsk, Russia

autor

Fitsych O. I.

• R&D Institute for Materials SRC “Carat”, 202 Stryjska St., 79031 Lviv, Ukraine

autor

Voitsekhovsky A. V.

• Tomsk State University, 36 Lenin Ave., 634050 Tomsk, Russia

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