MOCVD grown MWIR HgCdTe detectors for high operation temperature conditions

• Autorzy: Martyniuk P. , Koźniewski A. , Kębłowski A. , Gawron W. , Rogalski A.

Identyfikatory

DOI

10.2478/s11772-014-0186-y

• Języki publikacji: EN

Abstrakty

EN

The paper reports on photoelectrical performance of the mid-wave infrared HgCdTe detector for high operating temperature condition. Detector structure was simulated with APSYS numerical platform by Crosslight Inc. The comprehensive analysis of the detector performance such as dark current, detectivity, time response vs. device architecture and applied bias has been performed. The N⁺pP⁺n⁺ HgCdTe heterostructure photodiode operating in room temperature at a wavelength range of 2.6–3.6 μm enabled to reach: detectivity ~ 8.7×10¹⁰ cmHz¹/²/W, responsivity ~ 1.72 A/W and time response ~ 145 ps(V = 200 mV).

Słowa kluczowe

EN

MWIR; SWIR; HgCdTe heterostructures; HOT detectors

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2014
• Tom: Vol. 22, No. 2
• Strony: 118--126
• Opis fizyczny: Bibliogr. 32 poz., tab., wykr.

Twórcy

autor

Martyniuk P.

• Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland

autor

Koźniewski A.

• Vigo System S.A., 129/133 Poznańska Str., 05-850 Ożarów Mazowiecki, Poland

autor

Kębłowski A.

• Vigo System S.A., 129/133 Poznańska Str., 05-850 Ożarów Mazowiecki, Poland

autor

Gawron W.

• Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland

autor

Rogalski A.

• Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland

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