A diode-pumped high-repetition-frequency passively Q-switched Nd:LaMgAl₁₁O₁₉ laser

• Autorzy: Xu Yan , Gao Ziye , Xia Guangqiong , Wu Zhengmao

Identyfikatory

DOI

10.37190/oa200307

• Języki publikacji: EN

Abstrakty

EN

High-repetition-frequency Q-switched laser is realized through adopting a Nd:LaMgAl₁₁O₁₉ (Nd:LMA) disordered crystal as the gain material, a laser diode lasing at 796 nm as the pumped source, and a semiconductor saturable absorber mirror (SESAM) as the Q-switched device. The out-put characteristics are analyzed under using different transmittance T plane mirrors as an output coupler. Without adopting SESAM, the laser is operating at a CW state, and a relatively high transmittance is helpful for achieving high output power, slope efficiency and light-to-light efficiency. ForT = 7.5% and an absorbed power of 6.17 W, the output power arrives at its maximum of 1160 mW,and the corresponding slope efficiency and light-to-light efficiency are 20.71% and 18.78%, respectively. After introducing SESAM into the cavity, the laser operates at a passively Q-switched state, and the largest slope efficiency is 13.14% under T = 5.0%. Adopting five different output couplers, with the increase of the absorbed power, the pulse repetition frequencies, the pulse energies and the peak powers will ascend while the pulse widths will decline. The observed narrowest pulse width, the maximum pulse repetition frequency, the highest pulse energy and peak power are 1.745 μs, 175.88 kHz, 3.21 μJ and 1.84 W, respectively.

Słowa kluczowe

EN

Nd:LaMgAl11O19 disordered crystal; Q-switched laser; high pulse repetition frequency; PRF; semiconductor saturable absorber mirror; SESAM; laser diode; LD

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2020
• Tom: Vol. 50, nr 3
• Strony: 415--423
• Opis fizyczny: Bibliogr. 30 poz., rys.

Twórcy

autor

Xu Yan

• School of Physical Science and Technology, Southwest University, Chongqing 400715, China

autor

Gao Ziye

• School of Physical Science and Technology, Southwest University, Chongqing 400715, China

autor

Xia Guangqiong

• School of Physical Science and Technology, Southwest University, Chongqing 400715, China

autor

Wu Zhengmao

• School of Physical Science and Technology, Southwest University, Chongqing 400715, China

Bibliografia

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