The wear curves of nitrogen-implanted WC-Co indexable knives during particleboard milling

• Autorzy: Wilkowski J. , Wachowicz J. , Barlak M. , Werner Z. , Böttger R.
• Języki publikacji: EN

Abstrakty

EN

The paper presents the wear curves of WC-Co indexable knives during particleboard milling. The knives were previously nitrogen implanted to a dose of 1e17 cm-2 , at two different ion energies - 5 and 500 keV. The WC-Co composites with small WC grains (up to 0.5 μm) and low cobalt content (up to 2.5%) were used. These materials exhibit high hardness and, at the same time, low fracture toughness. Particleboard were milled using a CNC machining center. Longer tools life was obtained for blades implanted with energy of 500 keV. The catastrophic blunting (large chipping of the cutting edge) was more common for blades implanted at 5 keV ion energy.

Słowa kluczowe

EN

wear curve; nitrogen implantation; WC-Co indexable knives; particleboard; CNC milling

• Wydawca: Wydawnictwo Szkoły Głównej Gospodarstwa Wiejskiego w Warszawie
• Czasopismo: Annals of Warsaw University of Life Sciences - SGGW. Forestry and Wood Technology
• Rocznik: 2018
• Tom: No. 104
• Strony: 395--399
• Opis fizyczny: Bibliogr. 5 poz.

Twórcy

autor

Wilkowski J.

• Department of Mechanical Processing of Wood, Warsaw University of Life Sciences - SGGW

autor

Wachowicz J.

• Department of Mechanical Processing of Wood, Warsaw University of Life Sciences - SGGW

autor

Barlak M.

• Plasma and Ion Technology Division (FM2), National Centre for Nuclear Research Świerk - NCBJ

autor

Werner Z.

• Plasma and Ion Technology Division (FM2), National Centre for Nuclear Research Świerk - NCBJ

autor

Böttger R.

• Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf – HZDR

Bibliografia

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• 4. NAROJCZYK J., WERNER Z., PIEKOSZEWSKI J., 2001: Analysis of the wear process of nitrogen implanted HSS stamping dies. Vacuum 63 (4): 691-695.
• 5. SAMSONOV G.V., KOSOLAPOVA T.J., 1975: Vysokotemperaturnye karbidy. Naukova Dumka, Kiev.