Influence of doping on the performance of GaAs/AlGaAs QWIP for long wavelength applications

• Autorzy: Billaha A. , Das M. K.

Identyfikatory

DOI

10.1515/oere-2016-0006

• Języki publikacji: EN

Abstrakty

EN

Effect of doping and other device parameters on inter sub−band transition in the well, responsivity and dark current of GaAs/Al_xGa_1-xAs quantum well infrared photodetector (QWIP) is investigated using theoretical model. 2X2 Hamiltonian method is used to calculate Eigen energy states in this modelling. Results show that peak absorption, responsivity and spectral broadening width increase nonlinearly with increasing doping concentration in the well. Peak absorption coefficient increases with increase in well width also. Moreover, with increase in mole fraction of Al in Al_xGa_1-xAs barrier, the inter sub-band absorption is enhanced but, peak wavelength of absorption shifts towards shorter wavelengths. Dark current density depends on both, the doping concentration and applied bias.

Słowa kluczowe

EN

quantum wells; inter sub-band absorption; doping concentration; responsivity; dark current

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2016
• Tom: Vol. 24, No. 1
• Strony: 25--33
• Opis fizyczny: Bibliogr. 34 poz., tab., wykr.

Twórcy

autor

Billaha A.

• SAP Research Laboratory, Dept. of Electronics Engineering, Indian School of Mines, Dhanbad - 826004, Jharkhand, India

autor

Das M. K.

• SAP Research Laboratory, Dept. of Electronics Engineering, Indian School of Mines, Dhanbad - 826004, Jharkhand, India

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Uwagi

PL

Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę.