Exposition time analysis of AlGaN/GaN HEMT fabrication by electron beam lithography

• Autorzy: Indykiewicz Kornelia , Paszkiewicz Bogdan , Paszkiewicz Regina

Identyfikatory

DOI

10.5277/oa190114

• Języki publikacji: EN

Abstrakty

EN

Electron beam lithography, due to the high design flexibility and high pattering resolution can be used as an exclusive lithography method in device fabrication in R&D reality. To achieve the reasonable time of process exposition, some essential steps and actions must be done. In the article, the main technical and technological dependences, based on AlGaN/GaN HEMT transistor fabrication, will be presented and discussed. As a result of conducted studies, the total time of the most important lithography process expositions will be shown and explained.

Słowa kluczowe

EN

electron beam lithography; device fabrication; exposition time reduction

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2019
• Tom: Vol. 49, nr 1
• Strony: 161--166
• Opis fizyczny: Bibliogr. 6 poz., rys., tab.

Twórcy

autor

Indykiewicz Kornelia

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Science and Technology, 11/17 Janiszewskiego St., 50-372 Wrocław, Poland

autor

Paszkiewicz Bogdan

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Science and Technology, 11/17 Janiszewskiego St., 50-372 Wrocław, Poland

autor

Paszkiewicz Regina

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Science and Technology, 11/17 Janiszewskiego St., 50-372 Wrocław, Poland

Bibliografia

• [1] ENGSTROM D.S., PORTER B., PACIOS M., BHASKARAN H., Additive nanomanufacturing – A review, Journal of Materials Research 29(17), 2014, pp. 1792–1816, DOI: 10.1557/jmr.2014.159.
• [2] RIO D., CONSTANCIAS C., MARTIN M., ICARD B., VAN NIEUWSTADT J., VIJVERBERG J., PAIN L., 5 kV multielectron beam lithography: MAPPER tool and resist process characterization, Journal of Vacuum Science and Technology B 28(6), 2010, article ID C6C14, DOI: 10.1116/1.3517664.
• [3] MANFRINATO V.R., CHEONG L.L., DUAN H., WINSTON D., SMITH H.I., BERGGREN K.K., Sub-5 keV electron-beam lithography in hydrogen silsesquioxane resist, Microelectronic Engineering 88(10), 2011, pp. 3070–3074, DOI: 10.1016/j.mee.2011.05.024.
• [4] LEE Y.-H, BROWNING R., MALUF N., OWEN G., PEASE R.F.W., Low voltage alternative for electron beam lithography, Journal of Vacuum Science and Technology B 10(6), 1992, pp. 3094–3098, DOI: 10.1116/1.585935.
• [5] INDYKIEWICZ K., PASZKIEWICZ R., PASZKIEWICZ B., Improvement of the electron beam lithography contact pads fabrication process, Optica Applicata 46(2), 2016, pp. 249–254, DOI: 10.5277/oa160209.
• [6] INDYKIEWICZ K., Zastosowanie litografii elektronowej do wytwarzania tranzystora AlGaN/GaN HEMT, PhD Thesis, Wrocław University of Science and Technology, 2018 (in Polish).

Uwagi

PL

Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2019).