Optical properties of AlN layers obtained by magnetron sputtering

• Autorzy: Potera P. , Wisz G. , Szyller Ł.

Identyfikatory

DOI

10.2478/msp-2018-0087

• Języki publikacji: EN

Abstrakty

EN

The growth of AlN layers on glass substrates using magnetron sputtering method was performed and the grown layers were subjected to optical measurements. Transmission spectra of the layers grown at different content of N₂ in the atmosphere were obtained. The transmission spectra as well as energy gap depended on N₂ content. The annealing of the layers in air led to transmission changes and influenced energy gap and refractive index values.

Słowa kluczowe

EN

optical properties; thin films; AlN

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2018
• Tom: Vol. 36, No. 4
• Strony: 717--721
• Opis fizyczny: Bibliogr. 30 poz., rys., tab.

Twórcy

autor

Potera P.

• Faculty of Mathematics and Natural Sciences University of Rzeszow, Rzeszow, Poland

autor

Wisz G.

• Faculty of Mathematics and Natural Sciences University of Rzeszow, Rzeszow, Poland

autor

Szyller Ł.

• Faculty of Mathematics and Natural Sciences University of Rzeszow, Rzeszow, Poland

Bibliografia

• [1] Jiang L.F., Shen W.Z., Ogawa H., Guo Q.X., J. Appl. Phys., 94 (2003), 5704.
• [2] Guo Q.X., Diang J., Tanaka T., Nishio M., Ogawa H., Appl. Phys. Lett., 86 (2005), 111911.
• [3] Caliendo C., Imperatori P., Cianci E., Thin Solid Films, 441 (2003), 32.
• [4] Cheng H.E., Lin T.Ch., Chien-Chen W., Thin Solid Films, 425 (2003), 85.
• [5] Kar J.P., Bose G., Tuli S., Scripta Mater., 54 (2006), 1755.
• [6] Lee Y., Wang S., Thin Solid Films, 446 (2004), 227.
• [7] Mccullen E.F., Thakur J.S., Danylyuk Y.V., Auner G.W., Rosenberger L.W., J. Appl. Phys., 103 (2008), 063504.
• [8] Khoshman J., Kordesch M.E., J. Non-Cryst. Solids, 351 (2005), 3334.
• [9] Phan D.T., Chung G.S., Appl. Surf. Sci., 257 (2011), 8696.
• [10] Mirpuri C., Xu S., Long J.D., Ostrikov K., J. Appl. Phys., 101 (2007), 024312.
• [11] Song Z.R., Yu Y., Shen D.S., Zou S.C, Zheng Z.H., Luo E.Z., Xie Z., Mater. Lett., 57 (2003), 4643.
• [12] Davis R.F., P. IEEE, 79 (1991), 702.
• [13] Sungren J.E., Hentzel H., J. Vac. Sci. Technol. A, 4 (1986), 2259.
• [14] Kumari N., Singh A.K., Barhai P.K., IJTFST, 3 (2014), 43.
• [15] Ristoscu C., Ducu C., Socol G., Craciunoiu F., Mihailescu I.N., Appl. Surf. Sci., 248 (2005), 411.
• [16] Six S., Gerlach J.W., Rauschenbach B., Thin Solid Films, 370 (2000), 1.
• [17] Vispute R.D., Narayan W.H., Appl. Phys. Lett., 67 (1995), 1549.
• [18] Ishihara M., Yumoto H., Tsuchiya T., Akashi K., Thin Solid Films, 281 (1996), 321.
• [19] Somno Y., Sasaki M., Hirai T., Thin Solid Films, 202 (1991) 333.
• [20] Yim W.M., Stofko E.J., Zanzucchi P.J., Pankove J.I., Ettenberg M., Gilbert S.L., J. Appl. Phys., 44 (1973) 292.
• [21] Miyauchi M., Ishikawa Y., Shibata N., Jpn. J. Appl. Phys., 31 (1992), L1714.
• [22] Calleja E., Sanchez-Garcia M.A., Monroy E., Sanchez F.J., Munoz E., Sanz-Hervas A., Villar C., Aguilar M., J. Appl. Phys., 82 (1997), 4681.
• [23] Viezbicke B.D., Patel S., Davis B.E., Birnie D.P., Phys. Status Solidi B, 252 (2015), 1700.
• [24] Gadenne M., Plon J., Gadenne P., Thin Solid Films, 333 (1998), 251.
• [25] Strite S., Morkoc H., J. Vac. Sci. Technol. B, 10 (1992), 1237.
• [26] Loughin S., French R.H., Ching W.Y., Xu Y.N., Slack G.A., Appl. Phys. Lett., 63 (1993), 1182.
• [27] Strassburg M., Senawiratne J., Dietz N., Haboeck U. Hoffmann A., Noveski V., Dalmau R., Schlesser R., Sitar Z., J. Appl. Phys., 96 (2004), 5870.
• [28] Boubaker K., EPJ Plus, 126 (2011), 1.
• [29] Trapalis A., Heffernan J., Farrer I., Sharman J., Kean A., J. Appl. Phys., 120 (2016), 205102.
• [30] Punitha K., Sivakumar R., Sanjeeviraja C., Sathe V., Ganesan V., J. Appl. Phys., 116 (2014), 213502.

Uwagi

PL

Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2019).