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Tytuł artykułu

Simulation analysis of geometrical parameters of monolithic on-chip transformers on silicon substrates

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Warianty tytułu
PL
Analiza parametrów geometrycznych monolitycznego transformatora na podłożu krzemowym
Języki publikacji
EN
Abstrakty
EN
In this work, we study the effect of the geometrical parameters of on chip transformer, so to establish a methodology of its dimensioning and consequently its integration in a chip. The inductance and thus the quality factor of the monolithic transformer depend on the geometry of the transformer. Therefore, the geometry of the transformer needs to be optimized to give better quality factor (primary or secondary) and the inductance of the transformer (primary or secondary). The various geometric parameters that influence the performance of the transformer: Our aim is the monolithic or hybrid integration of this type of transformer in power device.
PL
W artykule analizowano wpływ geometrii scalonego transformatora na jego właściwości. Analizowano monolityczny transformator naniesikony na podłoże krzemowe.
Rocznik
Strony
253--257
Opis fizyczny
Bibliogr. 18 poz., rys., wykr.
Twórcy
autor
  • USTO-MB University, Oran, Algeria
autor
  • USTO-MB University, Oran, Algeria
autor
  • University of Chlef, Chlef, Algeria
Bibliografia
  • [1] V. Zhuikov, N. Kuznietsov, Modeling of electrical and vibration signals of transformers with different magnetic properties, IEEE 33rd International Scientific Conference on Electronics and Nanotechnology (ELNANO), pp. 373-377, Kiev, 16-19 April, 2013.
  • [2] Kazimierz Zakrzewski, Electromagnetic field modeling in transformer design, Przeglad Elektrotechniczny, vol. 2012, no. 3, pp. 59-63, 2002.
  • [3] B. Chen, L. Lou, S. Liu, K. Tang, A semi-analytical extraction method for transformer model, 14th International Symposium on Integrated Circuits (ISIC), pp. 428-431, Singapore, 10-12 December, 2014.
  • [4] C.H. Kim, B. Park, High-performance stacked-coil transformers with thick metal layers, Electronics Letters, vol. 50, no, 19, pp. 1359-1361, 11 September, 2014.
  • [5] Y.J. Yoon, Y. Lu, R.C. Frye, P.R. Smith, A monolithic spiral transmission line balun, 7th IEEE Topical Meeting on Electrical Performance of Electronic Packaging, pp. 248-251, West Point, NY, 26-28 October, 1998.
  • [6] A.R. Belabad, N. Masoumi, S.J. Ashtiani, A fully integrated 2.4 GHz CMOS high power amplifier using parallel class A&B power amplifier and power-combining transformer for WiMAX application, AEU-International Journal of Electronics and Communications, vol. 67, no. 12, pp. 1030-1037, December, 2013.
  • [7] H.M. Hsu, C.W. Tseng, K.Y. Chan, Characterization of On-Chip Transformer Using Microwave Technique, IEEE Transactions on Electron Devices, vol. 55, no. 3, pp. 833-837, March, 2008.
  • [8] N. Julai, S.P. Chew, K.A. Hamid, Modeling & Analysis Planar Transformer for Power ICs Application, IEEE Region 10 Conference (TENCON), pp. 1-4, Hong Kong, 14-17 November, 2006.
  • [9] H.K. Chiou, H.Y. Liao, Chien-Chung Chen, S.M. Wang, Cheng- Chung Chen, A 2.6-GHz fully integrated CMOS power amplifier using power-combining transformer, Microwave and Optical Technology Letters, vol. 52, no. 2, pp.299-302, February, 2010.
  • [10] G. Liang, H. Sun, X. Zhang, X. Cui, Study on parameters calculation and order reduction of transformer model, International Conference on Power System Technology, vol. 1, pp. 486-490, 2004.
  • [11] K. Shibata, K. Hatori, Y. Tokumitsu, and H. Komizo, Microstrip spiral directional coupler, IEEE Trans. Microwave Theory Tech., vol. 29, pp. 680–689, 1981.
  • [12] E. Frlan, S. Meszaros, M. Cuhaci, and J. Wight, Computeraided design of square spiral transformers and inductors, IEEE MTT-S International Microwave Symposium, pp. 661– 664, 1989.
  • [13] S.-G. Lee, Area efficient and symmetric design of monolithic transformers for silicon RF ICs, IEEE TENCON, vol. 2, pp. 880–882, Sept. 1999.
  • [14] N. Seiya, S. Takashi, K. Yoshinori, Study on evaluation techniques of effective conductivity for copper-clad dielectric substrates, Asia-Pacific Microwave Conference (APMC), pp. 919-921, Sendai, Japan, 4-7 November, 2014.
  • [15] H. Gan and S. Simon Wong, Integrated transformer baluns for rf low noise and power amplifiers, IEEE Radio Frequency Integrated Circuits Symposium (RFIC), p. 4 pp., June 2006.
  • [16] Q. Zhao, J. Liu, Z. Yu, L. Sun, A new model of stacked transformers considering skin and substrate effects, 11th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), pp. 1-3, Xi'an, 29 October-01 November, 2012.
  • [17] B. Leite, E. Kerherve, J.B. Begueret, D. Belot, An Analytical Broadband Model for Millimeter-Wave Transformers in Silicon Technologies, IEEE Transactions on Electron Devices, vol. 59, no. 3, pp. 582-589, 23 January, 2012.
  • [18] Y. Yoon, Y. Lu, R. Frye, M. Lau, P. Smith, L. Ahlquist, and D. Kossives, Design and characterization of multilayer spiral transmission-line baluns, IEEE Transactions on Microwave Theory and Techniques, vol. 47, no. 9, pp. 1841 –1847, September 1999.
Uwagi
Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę (zadania 2017).
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-b0fe8f42-3959-4203-b47c-bb3524d9b2f1
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