Simulation analysis of geometrical parameters of monolithic on-chip transformers on silicon substrates

• Autorzy: Namoune A. , Hamid A. , Taleb R.

Identyfikatory

DOI

10.15199/48.2017.01.62

Warianty tytułu

PL

Analiza parametrów geometrycznych monolitycznego transformatora na podłożu krzemowym

• Języki publikacji: EN

Abstrakty

EN

In this work, we study the effect of the geometrical parameters of on chip transformer, so to establish a methodology of its dimensioning and consequently its integration in a chip. The inductance and thus the quality factor of the monolithic transformer depend on the geometry of the transformer. Therefore, the geometry of the transformer needs to be optimized to give better quality factor (primary or secondary) and the inductance of the transformer (primary or secondary). The various geometric parameters that influence the performance of the transformer: Our aim is the monolithic or hybrid integration of this type of transformer in power device.

PL

W artykule analizowano wpływ geometrii scalonego transformatora na jego właściwości. Analizowano monolityczny transformator naniesikony na podłoże krzemowe.

Słowa kluczowe

EN

monolithic On-chip transformer; geometrical parameters; electrical parameter

PL

transformator monolityczny; geometria transformatora; podłoże krzemowe

• Wydawca: Wydawnictwo SIGMA-NOT
• Czasopismo: Przegląd Elektrotechniczny
• Rocznik: 2017
• Tom: R. 93, nr 1
• Strony: 253--257
• Opis fizyczny: Bibliogr. 18 poz., rys., wykr.

Twórcy

autor

Namoune A.

• USTO-MB University, Oran, Algeria

autor

Hamid A.

• USTO-MB University, Oran, Algeria

autor

Taleb R.

• University of Chlef, Chlef, Algeria

Bibliografia

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• [4] C.H. Kim, B. Park, High-performance stacked-coil transformers with thick metal layers, Electronics Letters, vol. 50, no, 19, pp. 1359-1361, 11 September, 2014.
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• [12] E. Frlan, S. Meszaros, M. Cuhaci, and J. Wight, Computeraided design of square spiral transformers and inductors, IEEE MTT-S International Microwave Symposium, pp. 661– 664, 1989.
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• [15] H. Gan and S. Simon Wong, Integrated transformer baluns for rf low noise and power amplifiers, IEEE Radio Frequency Integrated Circuits Symposium (RFIC), p. 4 pp., June 2006.
• [16] Q. Zhao, J. Liu, Z. Yu, L. Sun, A new model of stacked transformers considering skin and substrate effects, 11th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), pp. 1-3, Xi'an, 29 October-01 November, 2012.
• [17] B. Leite, E. Kerherve, J.B. Begueret, D. Belot, An Analytical Broadband Model for Millimeter-Wave Transformers in Silicon Technologies, IEEE Transactions on Electron Devices, vol. 59, no. 3, pp. 582-589, 23 January, 2012.
• [18] Y. Yoon, Y. Lu, R. Frye, M. Lau, P. Smith, L. Ahlquist, and D. Kossives, Design and characterization of multilayer spiral transmission-line baluns, IEEE Transactions on Microwave Theory and Techniques, vol. 47, no. 9, pp. 1841 –1847, September 1999.

Uwagi

Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę (zadania 2017).