Influence of the selection of the approximating function of thermometric characteristics on the measurement results of thermal resistance of power mosfets

• Autorzy: Górecki Krzysztof , Posobkiewicz Krzysztof

Identyfikatory

DOI

10.24425/mms.2024.149702

• Języki publikacji: EN

Abstrakty

EN

The paper describes the results of investigations illustrating the influence of the method of determining the excess of junction temperature and the selection of a function approximating the thermometric characteristic used in the procedure of measuring thermal resistance of a power MOS transistor on the measurement results. The investigations involved the measurements made using an indirect electrical method. Three methods of determining the excess of junction temperature of the transistor are presented, using a linear function and nonlinear function approximating thermometric characteristics. The thermal resistance measurement results obtained using each of the considered methods were compared. The measurement error caused by the selection of the considered methods was also analyzed.

Słowa kluczowe

EN

thermal resistance; thermal parameters of semiconductor devices; thermometric characteristics; power MOS transistors; measurements

• Wydawca: Komitet Metrologii i Aparatury Naukowej PAN
• Czasopismo: Metrology and Measurement Systems
• Rocznik: 2024
• Tom: Vol. 31, nr 2
• Strony: 307--321
• Opis fizyczny: Bibliogr. 22 poz., rys., tab., wykr., wzory

Twórcy

autor

Górecki Krzysztof

• Gdynia Maritime University, Department of Marine Electronics, ul. Morska 81-87, 81-225 Gdynia, Poland

• https://orcid.org/0000-0002-9857-8235

autor

Posobkiewicz Krzysztof

• Gdynia Maritime University, Department of Marine Electronics, ul. Morska 81-87, 81-225 Gdynia, Poland

Bibliografia

• [1] Bryant, A. T., Mawby, P. A., Palmer, P. R., Santi, E., & Hudgins, J. L. (2008). Exploration of Power Device Reliability Using Compact Device Models and Fast Electrothermal Simulation. IEEE Transactions on Industry Applications, 44(3), 894-903. https://doi.org/10.1109/tia.2008.921388
• [2] Latry, O., Dherbecourt, P., Denis, P., Cuvilly, F., & Kadi, M. (2018). Failure investigation of packaged SiC-diodes after thermal storage in extreme operating condition. Engineering Failure Analysis, 83, 185-192. https://doi.org/10.1016/j.engfailanal.2017.09.010
• [3] Górecki, P., Pietruszka, A., Skwarek, A., & Illés, B. (2023, September 27). Reliability tests of the surface-mounted power MOSFETs soldered using SAC0307-TiO2 composite solder paste. 2023 29th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC). https://doi.org/10.1109/therminic60375.2023.10325884
• [4] Narendran, N., & Gu, Y. (2005). Life of LED-Based White Light Sources. Journal of Display Technology, 1(1), 167-171. https://doi.org/10.1109/jdt.2005.852510
• [5] Bahman, A. S., Ma, K., & Blaabjerg, F. (2018). A Lumped Thermal Model Including Thermal Coupling and Thermal Boundary Conditions for High-Power IGBT Modules. IEEE Transactions on Power Electronics, 33(3), 2518-2530. https://doi.org/10.1109/tpel.2017.2694548
• [6] Poppe, A. (2015). Multi-domain compact modeling of LEDs: An overview of models and experimental data. Microelectronics Journal, 46(12), 1138-1151. https://doi.org/10.1016/j.mejo.2015.09.013
• [7] Li, L., He, Y., & Du, B. (2022). Measurement method of the IGBT chip temperature fluctuation based on electrothermal model derivation. Microelectronics Journal, 130, 105613. https://doi.org/10.1016/j.mejo.2022.105613
• [8] Janicki, M., Torzewicz, T., Samson, A., Raszkowski, T., Sobczak, A., Zubert, M., & Napieralski, A. (2017). Experimental investigation of discrete air cooled device thermal resistance dependence on cooling conditions. Microelectronics Reliability, 79, 405-409. https://doi.org/10.1016/j.microrel.2017.05.008
• [9] Perret, R. (Ed.). (2009). Power Electronics Semiconductor Devices. John Wiley & Sons, Ltd.
• [10] Górecki, P., & d’Alessandro, V. (2023). A Datasheet-Driven Electrothermal Averaged Model of a Diode-MOSFET Switch for Fast Simulations of DC-DC Converters. Electronics, 13(1), 154. https://doi.org/10.3390/electronics13010154
• [11] Mitsubishi Electronics Corporation. (1995). Mitsubishi Semiconductors Power Module MOS-Data Book, Mitsubishi Electronics Corporation, Tokyo.
• [12] Poppe, A., Yan Zhang, Wilson, J., Farkas, G., Szabo, P., Parry, J., Rencz, M., & Szekely, V. (2009). Thermal Measurement and Modeling of Multi-Die Packages. IEEE Transactions on Components and Packaging Technologies, 32(2), 484-492. https://doi.org/10.1109/tcapt.2008.2004578
• [13] Górecki, K., & Posobkiewicz, K. (2021). Selected Problems of Power MOSFETs Thermal Parameters Measurements. Energies, 14(24), 8353. https://doi.org/10.3390/en14248353
• [14] Górecki, K., & Zarębski, J. (2001). Badanie charakterystyk termometrycznych elementów półprzewodnikowych ze złączem p-n. Metrology and Measurement Systems, 8(4), 397-411. (in Polish)
• [15] Górecki, K., & Górecki, P. (2015). The Analysis of Accuracy of Selected Methods of Measuring the Thermal Resistance IGBTs. Metrology and Measurement Systems, 22(3), 455-464. https://doi.org/10.1515/mms-2015-0036
• [16] Posobkiewicz, K., Data, A., & Górecki, K. (2022). Realizacja praktyczna układu do pomiaru parametrów cieplnych tranzystorów MOS mocy. Przegląd Elektrotechniczny, 98(1), 143-146. https://doi.org/10.15199/48.2022.01.29 (in Polish)
• [17] Zaiontz, C. (2020). Real Statistics Using Excel. www.real-statistics.com
• [18] Howell, D. C. (2010). Statistical Methods for Psychology (7th ed.). Wadsworth, Cengage Learning. https://labs.la.utexas.edu/gilden/files/2016/05/Statistics-Text.pdf
• [19] Fairchild Semiconductor. FDB52N20 Datasheet [Datasheet, 11.2013]. https://www.onsemi.com/download/data-sheet/pdf/fdb52n20-d.pdf
• [20] Ohmite (n.d.). Data sheet of heat-sink D Series. https://www.ohmite.com/catalog/d-series-heatsink
• [21] Górecki, K., & Posobkiewicz, K. (2023). Influence of a PCB Layout Design on the Efficiency of Heat Dissipation and Mutual Thermal Couplings between Transistors. Electronics, 12(19), 4116. https://doi.org/10.3390/electronics12194116
• [22] Liebhard, J. H., IV, & Liebhard, J. H., V. (2008). A Heat Transfer Textbook (3rd ed.). Phlogiston Press: Cambridge, USA.

Uwagi

The project was financed in the framework of the program by the Polish Ministry of Science and Higher Education called “Regionalna Inicjatywa Doskonałości” (Regional Initiative of Excellence) in the years 2019-2023, project number 006/RID/2018/19, the sum of financing 11,870,000 PLN.