Considerations on SiC MOSFET TSEP-based junction temperature measurement routines in practical use

• Autorzy: Bąba Sebastian , Palesa Grzegorz , Wiśniewski Jarosław , Mańka Filip

Identyfikatory

DOI

10.15199/48.2024.05.06

Warianty tytułu

PL

Praktyczne wykorzystanie metod pomiaru temperatury złącza tranzystora SiC MOSFET w oparciu o parametry elektryczne

• Języki publikacji: EN

Abstrakty

EN

Despite being discussed in multiple papers, practical implementation of TSEP-based junction temperature measurement method for SiC MOSFETs causes significant challenges, especially when used in real-life power converters. Challenges which are not usually considered in conference nor journal pares are related to applicability, repeatability and accuracy, especially in comparison to other well-established techniques. To fill this gap in the state of the art, various test routines for junction temperature estimation based on SiC MOSFET on-state channel resistance measurement were compared.

PL

Pomimo omawiania tematu pomiaru temperatury złącza tranzystorów SiC MOSFET w oparciu o ich parametry elektryczne w wielu artykułach, pomiar ten dalej nastręcza wielu trudności - w szczególności przy wykorzystaniu w rzeczywistych przekształtnikach energoelektronicznych. Wyzwania, które z reguły są pomijane w artykułach badawczych dotyczą wykonywalności, powtarzalności i dokładności pomiaru, w szczególności przy porównianiu do innych dobrze znanych metod pomiaru. Aby wypełnić tę lukę, porównano różne sposoby estymacji temperatury złącza w oparciu o pomiar rezystancji kanału tranzystora SiC MOSFET.

Słowa kluczowe

EN

SiC; MOSFET; TSEP; junction temperature

PL

SiC; MOSFET; TSEP; temperatura złącza

• Wydawca: Wydawnictwo SIGMA-NOT
• Czasopismo: Przegląd Elektrotechniczny
• Rocznik: 2024
• Tom: R. 100, nr 5
• Strony: 31--37
• Opis fizyczny: Bibliogr. 23 poz., rys., tab.

Twórcy

autor

Bąba Sebastian

• Research and Development Department TRUMPF Huettinger Sp. z o. o. ul. Marecka 47 05-220 Zielonka, Poland

autor

Palesa Grzegorz

• Research and Development Department TRUMPF Huettinger Sp. z o. o. ul. Marecka 47 05-220 Zielonka, Poland

autor

Wiśniewski Jarosław

• Research and Development Department TRUMPF Huettinger Sp. z o. o. ul. Marecka 47 05-220 Zielonka, Poland

autor

Mańka Filip

• Research and Development Department TRUMPF Huettinger Sp. z o. o. ul. Marecka 47 05-220 Zielonka, Poland

Bibliografia

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Uwagi

Opracowanie rekordu ze środków MNiSW, umowa nr POPUL/SP/0154/2024/02 w ramach programu "Społeczna odpowiedzialność nauki II" - moduł: Popularyzacja nauki i promocja sportu (2025).