MOSFET parameter extraction with EKV model

• Autorzy: Bartnik Ł. , Arabas J.
• Konferencja: Evolutionary Computation and Global Optimization 2009 / National Conference (12 ; 1-3.06.2009 ; Zawoja, Poland)
• Języki publikacji: EN

Abstrakty

EN

This paper reports results of an ongoing research on MOSFET parameter extraction using the EKV model. This work continues efforts in finding the best method for efficient and robust parameter extraction based on voltage-current structure characteristics. In the extraction process, voltage-current characteristics are matched by the characteristics generated by the model. Values of parameters for which the best match is observed are the result of the extraction. The extraction process is considered an optimization problem, which is then solved by an evolutionary algorithm followed by the Nelder-Mead simplex. The influence of the measurement error on the extraction results is investigated experimentally.

Słowa kluczowe

EN

Metal-Oxide-Semiconductor Field Effect Transistors; MOSFET; MOS transistor; EKV model; evolutionary algorithm; EA; evolutionary computation

PL

tranzystor polowy typu metal-tlenek-półprzewodnik; tranzystor polowy MOS; model EKV; algorytm ewolucyjny; obliczenia ewolucyjne

• Wydawca: Oficyna Wydawnicza Politechniki Warszawskiej
• Czasopismo: Prace Naukowe Politechniki Warszawskiej. Elektronika
• Rocznik: 2009
• Tom: z. 169
• Strony: 9--17
• Opis fizyczny: Bibliogr. 7 poz., tab., wykr.

Twórcy

autor

Bartnik Ł.

autor

Arabas J.

• Warsaw University of Technology, Institute of Electronic Systems, Warsaw, Poland,

Bibliografia

• [1] EKV Authors webpage. http://legwww.epfl.ch/ekv/people.html.
• [2] J. Arabas and S. Szostak. Hybrid Evolutionary Algorithm in MOSFET parameter extraction. Prace Naukowe Politechniki Warszawskiej, Elektronika, 2008.
• [3] J. Arabas, S. Szostak, L. Łukasiak, and A. Jakubowski. Studies of the feasibility of using global and local optimization methods in MOSFET characterization. Elektronika, I, 2008.
• [4] M. Bucher, C. Lallement, F. Theodoloz, C. Enz, and F. Krummenacher. The EPFL-EKV MOSFET model equations for simulation, version 2.6. 1997. http://legwww.epfl.ch/ckv/pdf/ekv_v262.pdf.
• [5] C. Enz, F. Krummenacher, and E. Vittoz. An analytical MOS transistor model valid in all regions of operation and dedicated to low-voltage and low-current applications. Journal on Analog Integrated Circuits and Signal Processsing, pages 83-114, 1995.
• [6] J.A. Nelder and R. Mead. A simplex method for function minimization. The Computer Journal, pages 308-313, 1965.