Hybrid evolutionary algorithm in MOSFET parameter extraction

• Autorzy: Arabas J. , Szostak S.
• Konferencja: Evolutionary Computation and Global Optimization 2008 / National Conference (11 ; 2-4.06.2008 ; Szymbark, Poland)
• Języki publikacji: EN

Abstrakty

EN

In this paper we report an on going research on applying evolutionary computation to the identification of technological parameters of MOS transistors (MOSFETs) using the current-voltage measurements. The identification consists in approximating the observed values of the current with the values generated by the transistor model. Values of parameters for which the smallest approximation error is observed are assumed to be the best estimations to the real values. The model is nonlinear and nondifferentiable, and the error function takes multiple local minima with respect to the parameter values. We apply a combination of an evolutionary algorithm together with the Nelder-Mead method to minimize the error function and we experimentally investigate the effectiveness of the proposed approach.

Słowa kluczowe

EN

evolutionary algorithm; EA; evolutionary computation; Nelder-Mead method; Metal-Oxide-Semiconductor Field Effect Transistors; MOS transistors; MOSFETs

PL

algorytm ewolucyjny; obliczenia ewolucyjne; metoda Nelder-Meada

• Wydawca: Oficyna Wydawnicza Politechniki Warszawskiej
• Czasopismo: Prace Naukowe Politechniki Warszawskiej. Elektronika
• Rocznik: 2008
• Tom: z. 165
• Strony: 33--41
• Opis fizyczny: Bibliogr. 10 poz., tab., rys.

Twórcy

autor

Arabas J.

autor

Szostak S.

• Warsaw University of Technology, Institute of Electronic Systems, Warsaw, Poland,

Bibliografia

• [1] International Technology Roadmap for Semiconductors, Semiconductor Industry Association, 2007.
• [2] N. Arora, MOSFET Modeling for VLSI Simulation Theory and Practice, World Scientific Publishing, 2007.
• [3] J. Arabas. Lecture Notes in Evolutionary Algorithms, WNT, 2007 (in Polish).
• [4] G. Chindalore, et al. "An experimental study of the effect of quantization of the effective electrical oxide thickness in MOS electron and hole accumulation layers in heavily doped Si", IEEE Trans. Electron Dev, vol. 47, p. 643, 2000.
• [5] C. Enz, E.A. Vittoz, Charge-Based MOS Transistor Modeling - the EKV Model for Low-Power and RF IC Design, Wiley, 2006.
• [6] Z. Michalewicz, Genetic Algorithms + Data Structures = Evolution Programs, Springer, 1996
• [7] R.F. Pierret, J.A. Shields, "Simplified long-channel MOSFET theory", Solid-State Electron, vol. 26, p. 143, 1983.
• [8] D. Schröder, Semiconductor material and deivice characterization, Wiley, 1990.
• [9] S. Szostak, Charge pumping in SOI structures - model and parameter extraction, Ph.D. Thesis, Warsaw University of Technology, 2001 (in Polish).
• [10] W. Press et al., Numerical Recipes in C, Cambridge Univ. Press, 1992.