Electron emission from carbon films prepared by CVD methods

• Autorzy: Staryga E. , Jarzyńska D. , Znamirowski Z.
• Konferencja: Vii Krajowa Konferencja Techniki Próżni (7; 18-21.09.2005; Cedzyna, Polska)
• Języki publikacji: PL

Abstrakty

EN

Electron emission from diamond and diamond-like carbon thin films deposited on silicon substrate has been studied. The diamond films were synthesized using radio frequency chemical vapor deposition method. The films were deposited using radio frequency chemical vapor deposition method. The films were charcterized using standard Scanning Electron Microscopy (SEM), Raman Spectroscopy (RS) techniques. Raman spectra of both diamond and diamond-like films exhibit spectral features characteristic of these structures. Electron emission studies were carried out using a sphere-to-plane electrode configuration. The results of electron emission were analyzed using the Fowler-Nordheim model. It was found that the diamond necleation density affected the electron emission properties. The emission turn-on fields are about 50 V/um, 90 V/um and 140 V/um for the small-grain diamond films, DLC films and large-grain diamond films, respectively.

Słowa kluczowe

EN

carbon films; electron emission

• Wydawca: Oficyna Wydawnicza Politechniki Warszawskiej
• Czasopismo: Prace Naukowe Politechniki Warszawskiej. Elektronika
• Rocznik: 2005
• Tom: z. 153
• Strony: 201--208
• Opis fizyczny: Bibliogr. 16 poz., rys., tab., wykr.

Twórcy

autor

Staryga E.

• Institute of Physics, Technical University of Łódź, Wólczańska 219, 93-005 Łódź

autor

Jarzyńska D.

• Faculty of Mech. Engineering, Technical University of Łódź, Stefanowskiego 1/15, 90-924 Łódź

autor

Znamirowski Z.

• Faculty of Microsystems Electronics and Photonics, Wroclaw Univ. of Technology, Janiszewskiego 11/17 50-372 Wrocław

Bibliografia

• [1] S. Aisenberg, R. Chabot, J. Vac. Sci. Techn. Vol. 8, p. 112-118, 1971.
• [2] K. Fabisiak, A. Banaszak, M. Kaczamarski, Functional Material. Vol. 10, p. 117-120, 2003.
• [3] Z. Haś, S. Mitura, B. Wendler, in T. Takagi, Proc. International Ion Engineering Congress: ISIAT&IPAT'83, Kyoto, Japan, 12-16 Sept., 1983. p. 1143-1145.
• [4] R.H. Fowler, L. Nordheim, Proc. Roy. Soc. Lon. Ser. A. Vol. 119, p. 173-181, 1928.
• [5] J.Y. Luo, K.S. Liu, J.S. Lee, I.N. Lin, H.F. Cheng, Diamond-Relat. Mater. Vol. 7, p. 704-710, 1998.
• [6] R. Forbes, Solid State Electronics. Vol. 45, p. 779-808, 2001.
• [7] E. Staryga, G.W. Bąk, Diamond Relat. Mater. Vol. 14, p. 23-34, 2005.
• [8] C.E. Nebel, Semicond. Sci. Technol. Vol. 18, p. S1-S11, 2003.
• [9] A.V. Karabutov, V.D. Frolov. V.I. Konov, Diamond Relat. Mater. Vol. 10, p. 840-846, 2001.
• [10] S. Orzeszko, W. Bała, K. Fabisiak, F. Rozpłoch, Phys. Stat. Sol.(a). Vol. 81, p. 579-584, 1984.
• [11] J.B. Cui, M. Stammler, J. Ristein, L. Ley, J. Appl. Phys. Vol. 88, p. 3667-3674, 2000.
• [12] O. Gröning, O.M. Kuttel, P. Gröning, L. Schlapbach, Appl. Surface Sci. Vol. 111, p. 135-139, 1997.
• [13] D.S. Knight, W.B. White, J. Mater. Res. Vol. 4, p. 385-393, 1989.
• [14] Handbook of industrial diamonds and diamond films. ed. M Prelas, G. Popovici, L.K. Bigelow, New York, Marcel Dekker Inc. p. 413-425, 1998.
• [15] D.M. Gruen, Annu. Rev. Mater. Sci. Vol. 29, p. 211-259, 1999. ·
• [16] Z. Znamirowski, E. Staryga, D. Jarzyńska, K. Nikliborc, A. Karczemska, M. Green, Proc. International Conference 4-th Nanodiamond and Related Materials jointly with 6-th Diamond and Related Films, Zakopane, Poland, 28 June-1 July, p. 149, 2005.