Electrothermal Model of SiC Power Schottky Diodes

• Autorzy: Zarębski J. , Dąbrowski J.

Warianty tytułu

PL

Model elektrotermiczny diod Schottky'ego mocy wykonanych z węglika krzemu

• Języki publikacji: EN

Abstrakty

EN

The paper concerns the problem of modelling d.c. characteristics of commercial SiC power Schottky diodes with self-heating taken into account. The electrothermal model of the investigated devices is proposed and experimentally verified. The evaluation of accuracy of the elaborated model has been performed by comparison of measured and calculated characteristics of selected SiC power Schottky diodes.

PL

Praca dotyczy problemu modelowania, z uwzględnieniem zjawiska samonagrzewania, prądowo-napięciowych charakterystyk komercyjnie dostępnych diod Schottky’ego mocy wykonanych z węglika krzemu. Zaproponowano i eksperymentalnie zweryfikowano elektrotermiczny model rozważanych w pracy elementów półprzewodnikowych. Ocenę dokładności modelu przeprowadzono poprzez porównanie charakterystyk obliczonych w programie SPICE z charakterystykami zmierzonymi wybranych diod Schottky’ego z węglika krzemu.

Słowa kluczowe

EN

Schottky diode; silicon carbide; modelling; self-heating; electrical technology; electrical power engineering

PL

dioda Schottky'ego; węglik krzemu; modelowanie; samonagrzewanie; elektrotechnika; elektroenergetyka

• Wydawca: Wydawnictwo SIGMA-NOT
• Czasopismo: Przegląd Elektrotechniczny
• Rocznik: 2011
• Tom: R. 87, nr 10
• Strony: 33--38
• Opis fizyczny: Bibliogr. 23 poz., il., tabl., wykr.

Twórcy

autor

Zarębski J.

autor

Dąbrowski J.

• Gdynia Maritime University, Department of Marine Electronics, 81-225 Gdynia, ul. Morska 83

Bibliografia

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• [18] Zarębski, J.; Dąbrowski, J.; Bisewski, D.: The Analysis of Temperature Influence on Switching Behaviour of the Power Schottky Diodes (in Polish). Electronics, No. 2, 2007, pp. 18- 20.
• [19] Zarębski, J.; Dąbrowski J.: D.C. Characteristics of SiC Power Schottky Diodes Modelling in SPICE. Informacije MIDEM, Vol. 36, No. 3, September 2006, pp. 123-126.
• [20] Zarębski J.; Dąbrowski J.: Non-isothermal Characteristics of SiC Power Schottky Diodes. International Symposium on Power Electronics, Electrical Drives, Automation and Motion SPEEDAM 2008, June, Italy, pp. 1363-1367.
• [21] Sze, S.M.: Physics of Semiconductor Devices. John Wiley & Sons, Inc., 1996.
• [22] Dąbrowski, J.: Modelling of Power Schottky Diodes with Thermal Effects Taken into Account (in Polish). Doctor’s thesis, Technical University of Lodz, Poland, 2007.
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