Growth of pentacene films investigated by LEEM and STM

• Autorzy: Sadowski J. T. , Al-Mahboob A. , Nishihara T. , Fujikawa Y. , Thayer G. E. , Tromp R. M. , Sakurai T.
• Konferencja: VII Krajowa Konferencja Techniki Próżni (7; 18-21.09.2005; Cedzyna, Polska)
• Języki publikacji: EN

Abstrakty

EN

Annealed, well ordered Bi(001) films have been used as substrates for the growth of pentacene (Pn). It has been determined using low-energy electron microscope (LEEM) that Pn nucleates on Bi(001) into a highly ordered, crystalline layer, with pentacene molecules "standing up" on the Bi surface. Moreover, the Pn layer is aligned with the bi(001) surface having a "point-on-line" commensurate relation with the substrate. The Pn/Bi(001) films was determined to crystallize in the bulk-like structure directly from the first Pn layer, while formation of the thin-film phase reported for the Pn growth on SiO(2) and other inert substrates is not observed.

Słowa kluczowe

EN

microelectronics

PL

mikroelektronika

• Wydawca: Oficyna Wydawnicza Politechniki Warszawskiej
• Czasopismo: Prace Naukowe Politechniki Warszawskiej. Elektronika
• Rocznik: 2005
• Tom: z. 153
• Strony: 117--120
• Opis fizyczny: Bibliogr. 10 poz., wykr., schem.

Twórcy

autor

Sadowski J. T.

• Institute for Materials Research,Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Japan

autor

Al-Mahboob A.

• Institute for Materials Research,Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Japan

autor

Nishihara T.

• Institute for Materials Research,Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Japan

autor

Fujikawa Y.

• Institute for Materials Research,Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Japan

autor

Thayer G. E.

• IBM T.J. Watson Research Center, Yorktown Heights, NY 10598, USA

autor

Tromp R. M.

• IBM T.J. Watson Research Center, Yorktown Heights, NY 10598, USA

autor

Sakurai T.

• Institute for Materials Research,Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Japan

Bibliografia

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