Elastic peak electron spectroscopy (EPES) measurements for determining the inelastic mean free path (IMFP) of electrons in selected oxide and nitride materials

• Autorzy: Krawczyk M. , Suski T. , Jabłoński A. , Bockowski M. , Grzegory I.
• Konferencja: Techniki Próżni i Technologie Próżniowe (6; 7; 23-25.09.2002; Korbielów, Polska)
• Języki publikacji: EN

Abstrakty

EN

Quantitative surface-and thin films analysis by electron spectroscopies (AES, XPS, EELS) requires the knowledge of one of the most important parameters of the electron transport such as the inelastic mean free path (IMFP) of electrons. The purpose of the present work is to determine experimentally the IMFPs in bulk MoO2 and GaN with stoiciometric surface concentrations of their constituents by elastic-peak electron spectroskopy (EPES). The electron intensities elastically backscattered from both MoO2 and GaN samples and the Ni standard material were recorded for primary energies E=200-2000eV. A Monte Carlo algorithm was applied to calculate the IMFPs. Experimental values were compared to the IMFPs resulting from two predictive formulae, i.e. the TPP-2M equation and the G-1equation. It was found that the measured IMFPs for MoO2 are considerably lower than calculated values of Tanuma et al. and Gries. The deviation of the measured IMFPs from the calculated IMFPs was highest at E=500eV. However, for the low energy range E-500eV such considerable deviation may be expected since the experimental IMFPs are limited to the surface region, whereas the calculated IMFPs refer to the bulk of the studied sample. In the case of GaN, a reasonable agreement was found between the measured IMFPs and corresponding calculated IMFPs.

Słowa kluczowe

PL

spektroskopia; elektrony; systemy pomiarowe

• Wydawca: Oficyna Wydawnicza Politechniki Warszawskiej
• Czasopismo: Prace Naukowe Politechniki Warszawskiej. Elektronika
• Rocznik: 2002
• Tom: z. 143
• Strony: 123--126
• Opis fizyczny: Bibliogr. 12 poz., wykr.

Twórcy

autor

Krawczyk M.

• Instytut Chemii Fizycznej Polskiej Akademii Nauk, Warszawa

autor

Suski T.

• Instytut Wysokich Ciśnień Polskiej Akademii Nauk, Warszawa

autor

Jabłoński A.

• Instytut Chemii Fizycznej Polskiej Akademii Nauk, Warszawa

autor

Bockowski M.

• Instytut Wysokich Ciśnień Polskiej Akademii Nauk, Warszawa

autor

Grzegory I.

• Instytut Wysokich Ciśnień Polskiej Akademii Nauk, Warszawa

Bibliografia

• 1. Annual Book of ASTM Standards, Vol. 3.06, Standard E 673, American Society for Testing and Materials West Conshohocken PA 1997.
• 2. M. Krawczyk, A. Jabłoński, Prace Naukowe Politechniki Warszawskiej, ser. Elektronika, nr 123, s. 131, 1999 (in Polish).
• 3. M. Krawczyk, J.W. Sobczak, A. Jabłoński, Elektronika 8-9, s. 66, 2001 (in Polish).
• 4. B. Lesiak, A. Kosinski, M. Krawczyk, L. Zommer, A. Jablonski, L. Kover, J. Toth, D. Varga, I. Cserny, J. Zemek, P. Jiricek, Polish J. Chem. Vol. 74, s. 847, 2000.
• 5. A. Katrib, J.W. Sobczak, M. Krawczyk, L. Zommer, A. Benadda, A. Jablonski, G. Maire, Surface Interface Anal. Vol. 34, s. 225, 2002.
• 6. G. Gergely, Surface Interface Anal. Vol. 3, s. 201, 1981.
• 7. S. Tanuma, C.J. Powell, D.R. Penn, Surface Interface Anal. Vol. 21, s. 165, 1994.
• 8. C.J. Powell, A. Jablonski, NIST Electron Inelastic-Mean-Free-Path Database-Version 1.0, National Institute of Standards, Gaithersburg, MD, 1999.
• 9. W.H. Gries, Surface Interface Anal. Vol. 24, s. 38, 1996.
• 10. C.J. Powell, A. Jablonski, J. Phys. Chem. Ref. Data vol. 28, s. 19, 1999.
• 11. S. Porowski, I. Grzegory, J. Cryst. Growth vol. 178, s. 174, 1997.
• 12. A. Jablonski, P. Jiricek, Surf. Sci. vol. 412/413, s. 42, 1998.