Ion beam induced depth redistribution of components in layered Al(sub 2)O(sub 3)/Al/Ni systems

• Autorzy: Komarov F. , Pilko V. , Frantskevich A. , Senkara J.
• Języki publikacji: EN

Abstrakty

EN

The composition of the thin buffer sheets between alumina substrate and thin deposited aluminium and nickeline films, was investigated by Rutherford backscattering. The components and impurities redistribution was obtained by the Ar1+ ion bombardment with the energies of l .5 and 75 keV. The alumina surface contamination with the carbon atoms decreased in the cases of the ion-beam assisted deposition and ion beam mixing by up to the order of the magnitude. In these cases the contamination redistribution was registered. The Ni-Al interdiffusion was observed in the case of the clean Al surface. It has also been shown that ion beams give us the possibility to form an alloy of the metal deposit with the substrate atoms at the room temperatures.

Słowa kluczowe

PL

aluminium; nikiel; wiązka jonów

• Wydawca: Oficyna Wydawnicza Politechniki Warszawskiej
• Czasopismo: Prace Naukowe Politechniki Warszawskiej. Elektronika
• Rocznik: 1999
• Tom: z. 123
• Strony: 65--68
• Opis fizyczny: Bibliogr. 1 poz., wykr.

Twórcy

autor

Komarov F.

autor

Pilko V.

autor

Frantskevich A.

autor

Senkara J.

• The Institute of Applied Physics Problems Mińsk