Effect of cavities in Si-substrate on heteroepitaxial growth of Si(sub 0.85)Ge(sub 0.15) alloys

• Autorzy: Gaiduk P. , Nylandsted A. , Lundsgaard H. , Komarov F.
• Języki publikacji: EN

Abstrakty

EN

A method of Si quasi-membrane formation for MBE growth of dislocation-free relaxed Si(0.85)Ge(0.15) alloy layers on Si substrate is presented. The Si quasi-membrane is formed by hydrogen im-plantation followed by thermal treatment which result in the formation of void-containing buffer layer that makes Si-Si bonds weaker. The effects of voids on the MBE growth of Si(0.85) Ge(0.15) alloy layers and the formation of misfit dislocations and their glissile arms - threading dislocations arę investigated and documented. It is found that the relaxation of strains in SiGe/Si layers is more enhanced in the case of the growth at void-containing substrate. A good share of threading arms run into the substrate and in this way the reduction of threading dislocations in the surface layer can be explained.

Słowa kluczowe

PL

kawitacja; heteroepitaksja

• Wydawca: Oficyna Wydawnicza Politechniki Warszawskiej
• Czasopismo: Prace Naukowe Politechniki Warszawskiej. Elektronika
• Rocznik: 1999
• Tom: z. 123
• Strony: 55--59
• Opis fizyczny: Bibliogr. 19 poz., wykr., rys.

Twórcy

autor

Gaiduk P.

autor

Nylandsted A.

autor

Lundsgaard H.

autor

Komarov F.

• Physical Elektronics Dept. of Belarusian State University Mińsk