Structural and optical properties of GaN/ESiC/Si heterostructures grown by MBE

• Autorzy: Skibarko I. , Milchanin O. , Gaiduk P. , Komarov F. , Marks J. , Pastuszka B. , Iller A. , Diduszko R.
• Języki publikacji: EN

Abstrakty

EN

We have investigated structural and optical properties of cubic GaN (beta-GaN) layers grown on SiC/Si(001) substrates by electron cyclotron resonance assisted molecular beam epitaxy (ECR-MBE) using several methods (RHEED, TEM, AFM, XRD, PL). The about 50 nm thick beta-SiC layers were formed firstly by the thermal annealing of Si(OO1) wafers in vacuum at initial pressure 1x10(-5) mbar. Then the GaN layers have been grown on SiC/Si structures with the growth ratę of 50-60 nm/h. It is established that GaN growth takes place in the three-dimensional mode and the final GaN layers are preferably of cubic orientation. The fraction of included hexagonal GaN phase is found to be negligible. The PL spectra of 250 mn thick beta-GaN exhibit emission in both blue and yellow ranges.

Słowa kluczowe

PL

ciśnienie; próżnia

• Wydawca: Oficyna Wydawnicza Politechniki Warszawskiej
• Czasopismo: Prace Naukowe Politechniki Warszawskiej. Elektronika
• Rocznik: 1999
• Tom: z. 123
• Strony: 49--54
• Opis fizyczny: Bibliogr. 54, rys., tab., wykr.

Twórcy

autor

Skibarko I.

autor

Milchanin O.

autor

Gaiduk P.

autor

Komarov F.

autor

Marks J.

autor

Pastuszka B.

autor

Iller A.

autor

Diduszko R.

• Institute of Applied Physics Problems Mińsk