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Surface Potential Modeling of a High-k HfO2-Ta2O5 Capacitor in Verilog-A

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A compact model of a high-k HfO2-Ta2O5 mixed layer capacitor stack is developed in Matlab. Model equations are based on the surface potential PSP model. After fitting the C-V characteristics in Matlab the model is coded in Verilog-A hardware description language and it is implemented as external library in Spectre circuit simulator within Cadence CAD system. The results are validated against the experimental measurements of the HfO2-Ta2O5 stack structure.
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Bibliografia
  • [1] G. Angelov, T. Takov, and St. Ristic "MOSFET Models at the Edge of 100-nm Sizes", Proc. of the 24th Intl. Conf. on Microelectronics (MIEL 2004) , Nis, Serbia and Montenegro, Vol. 1, pp. 295-298, 2004.
  • [2] The International Technology Roadmap for Semiconductors: http://www.itrs.net
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  • [6] E. Atanassova and A. Paskaleva, “Challenges of Ta2O5 as high-k dielectric for nanoscale DRAMs”, Microelectronics Reliability 47(6), pp. 913-923, 2007.
  • [7] E. Atanassova, M. Georgieva, D. Spassov, and A. Paskaleva, “High-k HfO2-Ta2O5 mixed layers: Electrical characteristics and mechanisms of conductivity”, Microel. Engin. 87 , pp. 668-676, 2010.
  • [8] G. Angelov, T. Takov, and St. Ristic "MOSFET Models at the Edge of 100-nm Sizes", Proc. 24th Intl. Conf. on Microelectronics (MIEL) , Nis, Serbia & Montenegro, Vol. 1, pp. 295-298, May 2004.
  • [9] M. Mierzwinski, P. O’Halloran, B. Troyanovsky, R. Dutton, “Changing the paradigm for compact model integration in circuit simulators using Verilog-A”, Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show (Nanotech 2003) , Vol. 2, February 2003, pp. 376–379.
  • [10] J. R. Brews, "Physics of the MOS transistor," in Silicon Integrated Circuits , D. Kahng, Ed. New York: Academic Press, 1981, vol. Supplement 2A, pp. 1-120, Applied Solid-state Science Series. S.M. Sze, “ Physics of Semiconductor Devices ”, Wiley, 1981.
  • [11] A. R. Boothroyd, S. W. Tarasewicz, and C. Slaby, "MISNAN-A physically based continuous MOSFET model for CAD applications," IEEE Trans. Computer-Aided Design , vol. CAD-10, pp. 1512-1529, 1991.
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  • [13] H. C. de Graaff and F. M. Klaassen, Compact Transistor Modelling for Circuit Design . Wien, New York: Springer-Verlag, 1990.
  • [14] G. Angelov, N. Bonev, R. Rusev, M. Hristov, A. Paskaleva, D. Spassov, “Verilog-A Model of a High-k HfO 2 -Ta 2 O 5 Capacitor”, Proc. of 18 th International Conference Mixed Design of Integrated Circuits and Systems (MIXDES2011) , pp. 470-475, Gliwice, Poland, June 16-18, 2011. ISBN 978-83-932075-0-3.
  • [15] K. J. Yang, C. Hu, “MOS Capacitance Measurements for High-Leakage Thin Dielectrics”, IEEE Transactions on Electron Devices , Vol. 46, No. 7, July 1999.
  • [16] G. Gildenblat, X. Li, W.Wu, H. Wang, A. Jha, R. van Langevelde, G.D.J. Smit, A.J. Scholten and D.B.M. Klaassen, "PSP: An Advanced Surface-Potential-Based MOSFET Model for Circuit Simulation ", IEEE Transactions on Electron Devices , Vol. 53, No. 9, pp. 1979-1993, September 2006.
  • [17] 2Li X. Li, W. Wu, G. Gildenblat, G.D.J. Smit, A.J. Scholten, and D.B.M. Klaassen, “PSP 103.0”, NXP Semiconductors and Arizona State University 2009
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bwmeta1.element.baztech-article-LODD-0002-0035
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