Impact Ionization Process in Deep Submicron MOSFET

• Autorzy: Speransky D. , Borzdov A. , Borzdov V.
• Języki publikacji: EN

Abstrakty

EN

Within the framework of Keldysh impact ionization model the calculation of effective threshold energy for silicon MOSFET with 100 nm channel length by means of ensemble Monte-Carlo simulation is performed. The possibility of impact ionization rate treatment with one-parameter Keldysh model in pre-breakdown and breakdown transistor operation mode using calculated effective threshold energy value is proposed.

Słowa kluczowe

EN

MOSFET; Monte Carlo; impact ionization; threshold energy

PL

MOSFET; metoda Monte Carlo; jonizacja zderzeniowa; energia progowa

• Wydawca: Lodz University of Technology. Department of Microelectronics and Computer Science
• Czasopismo: International Journal of Microelectronics and Computer Science
• Rocznik: 2012
• Tom: Vol. 3, nr 1
• Strony: 21--24
• Opis fizyczny: Bibliogr. 13 poz.

Twórcy

autor

Speransky D.

autor

Borzdov A.

autor

Borzdov V.

• Radiophysics and Computer Technologies Department, Belarussian State University, Minsk, Belarus,

Bibliografia

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