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In the paper the application of silicon carbide (SiC) in electronics especially for production of p-i-n diodes have been shown. Also the technology of honing process of samples made of silicon carbide using grinding, lapping and polishing method has been presented. Finally the process of machining and the stand for surface preparation, selected investigation results concerning assessment of geometrical microstructure and morphology of SiC samples surface layer after machining process have been depicted.
Czasopismo
Rocznik
Tom
Strony
81--93
Opis fizyczny
Bibliogr.16 poz.
Twórcy
autor
- Department of Production Engineering, Technical University of Lodz, Stefanowskiego 1/15, 90-924 Lodz, Poland
Bibliografia
- [1] Shackelford, J.F.: Introduction to Materials Science for Engineers, 7/E, University of California, Davis, USA, ISBN-W: 0136012604, 2009.
- [2] Wright, N.G., Horsfall, A. B. and Vassilevski, K.: Prospects for SiC electronics and sensors, Materials Today, Vol. 11, pp. 16-21, 2008.
- [3] Weitzel, Ch., Palmour, J., Carter, C., Moore, K., Nordquist, K., Allen, S., Thero, Ch. and Bhatnagar, M.: Silicon Carbide High-Power Devices, IEEE Transactions on Electron Devices, Vol. 43, pp. 1732-1738, 1996.
- [4] Bhatnagar, M. aand Baliga, B.: Comparison of 6H-SiC, 3C-SiC and Si for Power Devices, IEEE Transactions on Electron Devices, Vol. 40, pp. 645-655, 1993.
- [5] Iwami, M.: Silicon carbide: Fundamentals, Nuclear Instruments and Methods in Physics Research Section A, Vol. 466, pp. 406-411, 2001.
- [6] Sugawara, Y.: Recent Progress in SiC Power Device Developments and Application Studies, ISPSD, Cambridge, UK, 2003.
- [7] Paul Chow, T.: High-voltage SiC and GaN power devices, Microelectronic Engineering, Vol. 83, pp. 112-122, 2006.
- [8] Chalker, P.: Wide band semiconductor materials for high temperature electronics, Thin Solid Films, Vol. 343-344, pp. 616-622, 1999.
- [9] Carter, C., Jr., Tsvetkov, V., Glass, R., Henshall, D., Brady, M. and Muller, S.: Progress in SiC: from material growth to commercial device development, Materials Science and Engineering, Vol. 61-62, pp. 1-8, 1999.
- [10] Agarwal, A., Seshardi, S., Casady, J., Mani, S., MacMillan, M., Saks, N., Burk, A., Augustine, G., Balakrishna, V., Sanger, P., Brandt, C. and Rodrigues, R.: Status of SiC power devices at Northrop Grumman, Diamond and Related Materials, Vol. 8, pp. 295-301, 1999.
- [11] Lloyd, A., Baranzahi, A., Tobias, P. and Lundstrom, I.: High Temperature sensors based on metal-insulator-silicon carbide devices, Physica Status Solidi, Vol. 162, pp. 493-511, 1997.
- [12] http://www.rficdesign.com/electronics/types-of-diode
- [13] http://www.aist.go.jp/index_en.html
- [14] Gołąbczak, M., Kubiak, A. and Szymański, W.: Polerowanie struktur półprzewodnikowych na bazie węglika krzemu, Podstawy i Technika Obróbki Ściernej, edited by Andrzej Gołąbczak i Bogdan Kruszyński, Politechnika Łódzka, Łódź 2010, ISBN 83-920269-4-2, pp. 337-348.
- [15] Gołąbczak, M.: Polerowanie stopów magnezu, Współczesne problemy obróbki ściernej, edited by J. Plichta, Politechnika Koszalińska, str. 517-526, 2009.
- [16] Gołąbczak, M.: Wytwarzanie warstw węglowych na stopach magnezu metodą PACVD, doctoral thesis, Politechnika Łódzka, 2005.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-LOD9-0027-0033