Identyfikatory
Warianty tytułu
Języki publikacji
Abstrakty
Several Hall effect sensors were modeled and evaluated regarding the Hall voltage and sensitivity using 3D physical simulations. For accurate results the numerical offset and its temperature drift were analyzed. The versatility of the simulation allows various Hall sensor implementations. The simulation procedure could guide the designer in choosing the Hall cell optimum fabrication process, shape and dimensions in terms of the performances envisaged to be achieved.
Rocznik
Tom
Strony
140--145
Opis fizyczny
Bibliogr. 7 poz.
Twórcy
autor
autor
autor
- STI-IEL-Electronics Laboratory, Ecole Polytechnique Federale de Lausanne (EPFL), CH-10-15 Lausanne, Switzerland, maria-alexandra.paun@epfl.ch
Bibliografia
- [1] E. Ramsden, "Hall-Effect Sensors - Theory and Applications", (2nd Edition), Elsevier, 2006
- [2] M.A Paun , J.M. Sallese, and M Kayal, "Geometry influence on Hall effect devices performance", U.P.B. Sci. Bull, Series A, Vol. 72, Iss.4, 2010, p. 257-271
- [3] R. S. Popovic, Hall Effect Devices, Second Edition, Institute of Physics Publishing, 2004
- [4] M. Kimura, Y. Yamaguchi, H. Hashimoto, M. Hirako.T Yamaoka and S. Tania, "Analysis of Hall Voltage in Micro Poly-Si Hall Cells", Electrochemical and Solid-State Letters, 13(8), pp. J96-J9S, 2010
- [5] I. S. Selberherr, "'Analysis and Simulation of Semiconductor Device", Vienna, Austria, Springer-Verlag, 1984
- [6] W. Allegretto, A. Nathan, and H. Bakes, "Numerical Analysis of Magnetic-Field-Sensitive Bipolar Devices", IEEE Transaclions On Computer-Aided Design, Vol. 10, No. 4, 1991
- [7] Synopsys TCAD tools: http://www.synopsys.com/Tools/TCAD
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-LOD7-0029-0069