Modeling the characteristics of high-k HfO2-Ta2O5 capacitor in Verilog-A

• Autorzy: Angelov G. V.
• Języki publikacji: EN

Abstrakty

EN

A circuit simulation model of a MOS capacitor with high-k HfO2-Ta2O5 mixed layer is developed and coded in Verilog-A hardware description language. Model equations are based on the BSIM3v3 model core. Capacitance-voltage (C-V) and current-voltage (I-V) characteristics are simulated in Spectre circuit simulator within Cadence CAD system and validated against experimental measurements of the HfO2-Ta2O5 slack structure.

Słowa kluczowe

EN

device modeling; compact models; circuit simulation; high-k gate dielectric; Verilog-A; Spectre

PL

modelowanie elementów elektronicznych; model kompaktowy; symulacja obwodu; dielektryk bramkowy o wysokiej przenikalności elektrycznej; Verilog-A; Spectre

• Wydawca: Lodz University of Technology. Department of Microelectronics and Computer Science
• Czasopismo: International Journal of Microelectronics and Computer Science
• Rocznik: 2011
• Tom: Vol. 2, nr 3
• Strony: 105--112
• Opis fizyczny: Bibliogr. 15 poz.

Twórcy

autor

Angelov G. V.

• Technical University of Sofia, FETT, Dept. of Microelectronics, ECAD Laboratory,

Bibliografia

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