Towards a gm/Id design methodology for polymer-based organic thin film transistors

• Autorzy: Zanella F. , Muhlenen A. von , Szamel Z. , Nisato G. , Enz C. , Salesse J.-M.
• Języki publikacji: EN

Abstrakty

EN

In this paper we show based on experiments that an invariant representation exists for various polymer-based solution processable organic thin film transistors (OTFTs). Despite the fact that this technology suffers from a non-negligible spread of parameters, all experimental data exhibit low dispersion when represented in a gm/Id versus Id diagram. This result is important for circuit design strategy based on the gm/Id representation, giving more insight into analogue design methodology. In addition, the gm/Id invariant can also be used to extract the gale voltage mobility dependence that is inherent to organic field effect transistor.

Słowa kluczowe

EN

OFET; OTFT; gm/Id; P3HT; PTAA

PL

OFET; OTFT; gm/Id; P3HT; PTAA

• Wydawca: Lodz University of Technology. Department of Microelectronics and Computer Science
• Czasopismo: International Journal of Microelectronics and Computer Science
• Rocznik: 2011
• Tom: Vol. 2, nr 2
• Strony: 68--72
• Opis fizyczny: Bibliogr. 22 poz.

Twórcy

autor

Zanella F.

autor

Muhlenen A. von

autor

Szamel Z.

autor

Nisato G.

autor

Enz C.

autor

Salesse J.-M.

• Centre Suisse d'Electronique et de Microtechnique, CSEM SA, Mattenstrasse 22, 4016 Basel, Switzerland,

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