Measurement and performance evaluation of a silicon on insulator pixel matrix

• Autorzy: Ntavelis D. , Harik L. , Sallese J.-M. , Kayal M. , Hatzopoulos A.
• Języki publikacji: EN

Abstrakty

EN

A new technique for driving silicon-on-insulator pixel matrixes has been proposed in |1|, which was based on transient charge pumping for evacuating the extra photo-generated charges from the body of the transistor. An 8x8 pixel matrix was designed and fabricated using the above technique. In this paper, the measurement set-up is described and the performance evaluation procedure is given, together with results of its implementation on the fabricated pixel matrix. The results show the applicability of the charge pumping technique and the effective operation of the image sensor.

Słowa kluczowe

EN

SOI MOSFET; image sensors; charge pumping; first order delta-sigma

PL

technika SOI tranzystora polowego MOS; czujnik obrazu; pompować ładunek; pierwsza kolejność delta-sigma

• Wydawca: Lodz University of Technology. Department of Microelectronics and Computer Science
• Czasopismo: International Journal of Microelectronics and Computer Science
• Rocznik: 2010
• Tom: Vol. 1, nr 3
• Strony: 299--304
• Opis fizyczny: Bibliogr. 8 poz.

Twórcy

autor

Ntavelis D.

autor

Harik L.

autor

Sallese J.-M.

autor

Kayal M.

autor

Hatzopoulos A.

• Electrical Engineering Department, at the Ecole Polytechnique Federale de Lausanne, STI-IEL-ELB 331, station 11 1015 Lausanne, Switzerland,

Bibliografia

• [1] L. Harik, J-M. Sallese and M. Kayal, "Transient charge pumping as an efficient technique to measure low light intensity with PD SOI MOSFET," in Solid-State Electronics, Vol. 52, May 2008, pp 597-605.
• [2] J M Hill and J. Lachman, "A 900 MHz 2.25 MB cache with on chip CPU now in CU SOI" in ISSCC 2001. Session 11 SRAM 11.5.
• [3] M. Blagosevic, M. Kayal, M. Pastre, L. Harik, M.J. Declercq, S. Okhonin, P.C. Fazan, ''Capacitorless, IT DRAM sensing scheme with automatic reference generation", in Solid-State Circuits, IEEE Journal of, vol.41, no 6, pp. 1463-1470, June 2006.
• [4] L. Harik, J-M. Sallese, M. Kayal "Transient Charge Pumping as a New technique for a Higher Sensitivity SOI MOSFET Photodetector," European Solid-State Device Research Conference ESSDERC 2007, Munich-Germany, pp 366-369.
• [5] E. Culurciello, "Three dimensional Phototransistors in 3D Silicon-On-Insulator technology", in IET Electronics Letters, vol. 43, issue 7 29th March 2007, pp 418-420.
• [6] E. Culurciello and P Weerakoon, "Three-Dimensional Photodetectors in 3D Silicon-On-lnsulator technology", in IEEE Electron Device Letters, vol. 28, isuue 2, February 2007, pp 117-119.
• [7] L. Harik, J-M. Sallese and M. Kayal, "Delta-Sigma Loop Based on Charge Pumping m SOI Optical Sensor," IEEF Sensors 2008. October 2008 Lecce Italy, pp 1382-1385.
• [8] Shigehiro Miyatake, Masaru Miyamoto, Koichi Ishida, Takashi Morimoto, Yasuo Masaki and Hideki Tanabe "Transversal-Readout Architecture for CMOS Active Pixel Image Sensors. IEEE Transactions on electron devices, Vol.50, No 1, January 2003.