A rapid analysis of very short channel MOSFET performances by using a dynamic simple model

• Autorzy: Rabhi A. , El`Hadj Bekka R. , Benhamadouche A. , Rahmoune F. , Charlot J.-J.
• Języki publikacji: EN

Abstrakty

EN

A simplified MOSFET model is presented in this paper. The performances of the model, UNICELL (Unique Cell Model), are compared to those provided by BSIM3V3 taken as reference, even for very short channel length MOSFET (45 nm). It is shown that using only two UNICELL cells (BICELL) gives a good deal for CAD static and dynamic usage, because of the few number of parameters to be used in comparison to BSIM3. BICELL can also be used for determining internal performance analysis.

Słowa kluczowe

EN

MOSFET modeling; BSIM3V3; Verilog-A

PL

model tranzystora polowego MOS

• Wydawca: Lodz University of Technology. Department of Microelectronics and Computer Science
• Czasopismo: International Journal of Microelectronics and Computer Science
• Rocznik: 2010
• Tom: Vol. 1, nr 3
• Strony: 225--228
• Opis fizyczny: Bibliogr. 10 poz.

Twórcy

autor

Rabhi A.

autor

El`Hadj Bekka R.

autor

Benhamadouche A.

autor

Rahmoune F.

autor

Charlot J.-J.

• Department of Electronics, University Fernhat Abbas, Setif, Algeria,

Bibliografia

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• [7] Open Verilog International, "VERILOG-A Language Reference Manual," 1996.
• [8] "BSIM3V3 model VERILOG-A implementation," The Simulation Standard, SILVACO International, april 2003.
• [9] P. Yang, B. Depler, P.K. Chatterjee, "An investigation of the charge conservation problem for MOSFET circuit simulation," IEEE J. Sol. St. Circ 1983.
• [10] G. Wegmann, E.A. Vittoz, F. Rahali, "Charge Injection in analog MOS Switches," IEEE J. Sol St. Circ. 1987.