Distributed radiation monitoring system for linear accelerators based on CAN bus

• Autorzy: Kozak T. , Makowski D. , Napieralski A.
• Języki publikacji: EN

Abstrakty

EN

Gamma and neutron radiation is produced during the normal operation of linear accelerators like Free-Electron Laser in Hamburg (FLASH) or X-ray Free Electron Laser (X-FEL). Gamma radiation cause general degeneration of electronics devices and neutron fluence can be a reason of soft error in memories and microcontrollers. X-FEL accelerator will be built only in one tunnel, therefore most of electronic control systems will be placed in radiation environment. Exposing control systems to radiation may lead to many errors and unexpected failure of the whole accelerator system. Thus, the radiation monitoring system able to monitor radiation doses produced near controlling systems is crucial. Knowledge of produced radiation doses allows to detect errors caused by radiation, schedule essential replacement of control systems and prevent accelerator from serious damages. The paper presents the project of radiation monitoring system able to monitor radiation environment in real time.

Słowa kluczowe

EN

controller area network; gamma radiation dosimetry; neutron radiation dosimetry; radiation sensing Field Effect Transistor; linear accelerator; X-ray free electron laser

PL

obszar pod kontrolą sieci; dozymetria promieniowania gamma; dozymetria promieniowania neutronowego; akcelerator liniowy

• Wydawca: Lodz University of Technology. Department of Microelectronics and Computer Science
• Czasopismo: International Journal of Microelectronics and Computer Science
• Rocznik: 2010
• Tom: Vol. 1, nr 1
• Strony: 52--55
• Opis fizyczny: Bibliogr. 7 poz.

Twórcy

autor

Kozak T.

autor

Makowski D.

autor

Napieralski A.

• Department of Microelectronics and Computer Science technical University of Lodz Lodz,Poland

Bibliografia

• [1] D. Makowski, "The impact of Radiation on Electronic Devices with the special consideration of Neutron and Gamma Radiation Monitoring", PhD Thesis 2007.
• [2] G. Barbottin and A. Vapaille. Instabilities in Silicon Devices, New Insulators, devices and Radiation Effects. Elsevier, 1999.
• [3] F. Giustino, "Radiation Effects on Semiconductor Devices", PhD thesis, Politecnico di Totino, March 2001.
• [4] R. Brinkmann, "Accelerator Layout of the XFEL", XXII International Linear Accelerator Conference, vol. 1, pp. 2-7, August 2004.
• [5] A. Schwarz, "The European X-Ray free electron laser project at DESY", Proceedings of the 2004 FEL Conference, pp. 85-89, 2004
• [6] CAN Specification Version 2.0, Robert Bosch GmbH, 1991.
• [7] Pat Richards, CAN Physical Layer Discussion, Microchip Technology