Thermal assisted switching magnetic tunnel junctions as FPGA memory elements

• Autorzy: Silva V. , Fernandes J. R. , Oliveira L. B. , Neto H. C. , Ferreira R. , Freitas S. , Freitas P. P.
• Języki publikacji: EN

Abstrakty

EN

This paper presents our research and development work on new circuits and topologies based on Magnetic RAM for use as configuration memory elements of reconfigurable arrays. MRAM provides non volatility with cell areas and with access speeds comparable to those of SRAM and with lower process complexity than FLASH memories. The new memory cells take advantage of the Thermal Assisted Switching (TAS) writing technique to solve the drawbacks of the more common Field Induced Magnetic Switching writing technique. The CMOS circuit structures to implement the main components for reading and writing the MTJ cells have been developed, characterized and evaluated. A scaled down prototype of a coarse grain reconfigurable array that employs the TAS-MRAM elements as configuration memory has been designed and electrically simulated pre- and post- layout. The results obtained for all the circuit elements, namely the storage cells and the current generators, indicate that the new configuration memory cells can provide a very promising technological solution for run-time reconfigurable hardware devices. The prototype has been manufactured using a standard process 0.35μm 4-Metal CMOS process technology and should be under test in the foreseeable future.

Słowa kluczowe

EN

MRAM; magnetoresistive random access memory; MTJ; magnetic tunnel junction; writing schemes; FIMS; field induced magnetic switching; TAS; thermal assisted switching; STT

PL

MRAM; oporność magnetyczna pamięci o dostępie swobodnym; MTJ; magnetyczny tunel połączeń; pisanie projektów (programów); FIMS; pole indukowane magnetycznym przełącznikiem

• Wydawca: Lodz University of Technology. Department of Microelectronics and Computer Science
• Czasopismo: International Journal of Microelectronics and Computer Science
• Rocznik: 2010
• Tom: Vol. 1, nr 1
• Strony: 31--36
• Opis fizyczny: Bibliogr. 14 poz.

Twórcy

autor

Silva V.

autor

Fernandes J. R.

autor

Oliveira L. B.

autor

Neto H. C.

autor

Ferreira R.

autor

Freitas S.

autor

Freitas P. P.

• INESC-ID / IST / UTL, Technical University of Lisbon, Portugal,

Bibliografia

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