Tytuł artykułu
Treść / Zawartość
Pełne teksty:
Identyfikatory
Warianty tytułu
Języki publikacji
Abstrakty
In this paper, a novel switching-capacitor DC-DC voltage converter with higher efficiency will be presented. This circuit was designed by modifying the output stage of the conventional static charge-transfer-switch (CTS) charge pump in a cross-coupled configuration. In this design, a control scheme to overcome both the reverse charge sharing and the threshold drops in the CTS pump was also employed. In this study, the capacitances for all the pumping capacitors were selected the same as 0.1 μF. With this design, our circuit can operate with a clock rate up to 1 MHz. The performance of this circuit was first evaluated by simulation by HSPICE with the 0.35-μm technology of TSMC. The results showed that this circuit can pump the low input of 1.5V nearly 5 times at the output. The conversion gain can be around 95%. The performance of the real chip manufactured by TSMC was measured and will be compared with the simulation results.
Rocznik
Tom
Strony
9--14
Opis fizyczny
Bibliogr. 7 poz.
Twórcy
autor
autor
autor
autor
autor
autor
- Graduate Institute of Electronic Engineering, Feng Chia University, zh.hsieh@gmail.com
Bibliografia
- [1] Robert W. Erickson, Dragan Maslsimovic, "Fundamentals of Power Electronics," 2nd ed., Springer, 2001
- [2] J. Dickson, "On-chip High-voltage Generation on NMOS Integrated Circuit Using an Improved Voltage Multiplier Technique," IEEE J Solid-State Circuits, Vol. 11, pp. 374-378, 1976.
- [3] Jieh-Tsorng Wu and Kuen-Long Chang, "MOS Charge Pumps for Low-Voltage Operation," IEEE J. Solid-State Circuits, Vol. 33, pp. 592-597, 1998.
- [4] Miin-Shyue Shiau, Zong-Han Hsieh, Chi-Chieh Hsieh, Han-Yuen Liu, Don- Gey Liu, "A Novel Static CTS Charge Pump with Voltage Level Controller for DC-DC Converters," IEEE International Electronic Device and Solid State Conference(IEDSSC'07), Tainan, Taiwan. R.O.C., Dec. 21-23, 2007.
- [5] M.-S. Shiau, D.-G. Liu, S.-S. Liao, "Eliminating the Reverse Charge Sharing Effect in the Charge-Transfer-Switch Converter," IEICE Trans. Electronics, Vol. E91-C, No.12, pp. 1951-1957, 2008.
- [6] C.Y. Cheng, K. N. Leng, Y. K Sun, P. Y. Or, "Design of a Low-Voltage CMOS Charge Pump," 4lh IEEE International Symposium on Electronic Design, Test and Applications (DELTA'08), pp. 342-345, j Hong Kong, Jan. 23-25, 2008.
- [7] T. R. Ying, W-H. Ki, M. Chan, "Area-efficient CMOS charge pumps for LCD drivers," IEEE Journal of Solid-State Circuits, Vol. 38, pp. 1721-1725,2003.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-LOD6-0019-0002