System do pomiaru neutronów

• Autorzy: Makowski D. , Grecki M. , Mukherjee B. , Simrock S.
• Języki publikacji: PL

Słowa kluczowe

PL

system do pomiaru strat wiązki; SEE; SEU; TID; pamięć statyczna o dostępie swobodnym; SRAM

EN

single event effects; Single Event Upsest; total ionizing dose; Static Random Access Memory

• Wydawca: Katedra Mikroelektroniki i Technik Informatycznych Politechniki Łódzkiej
• Czasopismo: Mikroelektronika i Informatyka : prace naukowe
• Rocznik: 2004
• Tom: Z. nr 4
• Strony: 95--103
• Opis fizyczny: Bibliogr. 26 poz., wykr.

Twórcy

autor

Makowski D.

• Politechnika Łódzka. Katedra Mikroelektroniki i Technik Informatycznych, Al. Politechniki 11, 93-590 Łódź, Polska

autor

Grecki M.

• Politechnika Łódzka. Katedra Mikroelektroniki i Technik Informatycznych, Al. Politechniki 11, 93-590 Łódź, Polska

autor

Mukherjee B.

• Deutsches Elektronen-Synchrotron DESY Notkestrasse 85, D-22607 Hamburg, Niemcy

autor

Simrock S.

• Deutsches Elektronen-Synchrotron DESY Notkestrasse 85, D-22607 Hamburg, Niemcy

Bibliografia

• [1] Wittenburg K.: “Beam Loss Detection“ Proc. 1st European Workshop on Beam Diagnostics and Instrumentation for Particle Accelerators, Montreux, Switzerland, 3-5.5.1993,CERN PS/93-35 (BD)
• [2] Wittenburg K.: “Beam Loss Monitoring and Control“, EPAC 2002, Paris, France 2002
• [3] Michel P., Teichert J., Schurig R., Langenhagen H.: “Beam Loss Detection at Radiation Source ELBE“, DIPAC 2003, Mainz, Germany, 2003
• [4] Dehning B., Ferioli G., Gonzalez J.L., Guaglio G., Holzer E.B., Zamantzas C.: “The beam loss monitoring system”, in proceedings of Chamonix XIII, CERN, February 2004, Geneva, Switzerland
• [5] Batalov A., Wittenburg K.: “Beam Loss Monitors for TESLA”, Tesla-Report 2000-31
• [6] Makowski D., Grecki M., Jabłoński G.: “Application of a Genetic Algorithm to Design of Radiation Tolerant Programmable Devices” 11th International Conference Mixed Design of Integrated Circuits and Systems, Szczecin, 24-26 June 2004
• [7] Peterson R. J., ’’Radiation-induced Errors in Memory Chips”, Brazilian Journal of Physics vol.33 no.2 Säo Paulo June 2003
• [8] Boterenbrood H., Burckhart H.J., Cook J., Filimonov V., Hallgren B. and Varela- Rodriguez F.: “Results of radiation tests of the ELMB (ATmega128L) at the CERN TCC2 area” CERN ATLAS Internal Working Note DCS- IWN16 26 September 2002
• [9] Boterenbrood H., Burckhart H.J., Hallgren B., Kvedalen H., Roussel N.: “Single Event Effect Test of the Embedded Local Monitor Board” ATLAS Internal Working Note DCS- IWN12 20 September 2001
• [10] Brinkmann R., Flöttmann K., Roßbach J., Schmüser P., Walker N., Weise H.: ’’TESLA Technical Design Report - The Accelerator, part II”, Desy, Hamburg 2001
• [11] Materlik G., Tschentscher Th.: “TESLA Technical Design Report - The X-Ray Free Electron Laser, PART V”, Desy, Hamburg 2001
• [12] Shi W.: “SASE X-Ray Free Electron Laser in DESY - The 4th Generation Light Source” Journal of the GCPD e.V. 6 December 2000
• [13] Lee H.S., Ban S., Shin K., Sato T., Maetaki S., Chung C.W., Choi H.D.: “Systematics of Differentia] Photoneutron Yields Produced from AI, Ti, Cu, Sn, W and Pb Targets by Irradiation of 2.04 GeV Electrons”, International Conference on Nuclear Data for Science and Technology, Japan, Tsukuba, September 2001
• [14] Job P.K., Alderman J.: “Neutrons Fluence Estimates Inside the APS Storage Rings During Normal Operation” Advanced Photon Source, 2002
• [15] Actel - White Paper: ’’Effects ofNeutrons on Programmable Logic”, 2002
• [16] Caffrey M., Graham P., Johnson E., Wirthlin M., Carmichael C.: “Single-Event Upset in SRAM FPGAs”, Conference On Computing Frontiers National Laboratory, USA 2004, Pages: 419 - 432
• [17] Makowski D., Mukherjee B., Grecki M. and Simrock S.: “SEE Induced in SRAM operating in a Superconducting Electron Linear Accelerator Environment”, in proceedings of the XIV IEEE-SPIE Symposium on Photonics and Web Engineering, 26- 30 May 2004, Wilga, Poland
• [18] Faccio F., Detcheverry C., Huhtinen M.: “First evaluation of the Single Event Upset (SEU) risk for electronics in the CMS experiment”, CERN CMS NOTE 1998/054 (1998)
• [19] Dodd P.E., Shaneyfelt M.R., Sexton F.W.: “Charge collection and SEU from angled ion strikes” Sandia Nat. Labs., Albuquerque, Nuclear Science, IEEE Transactions USA July 1997
• [20] Detcheverry C., Ecoffet R., Duzellier S., Bruguier G., Barak J., Lifshitz Y.: “New definition of the SEU sensitive volume in a submicron SRAM technologie” RADECS97, Cannes, September 1997
• [21] Huhtinen M., Faccio F.: “Computational method to estimate Single Event Upset rates in an accelerator environment”, CERN, CF1-1211 Geneva 23, Switzerland
• [22] Giustino F.: “PhD Thesis Radiation Effects on Semiconductor Devices”, Politecnico di Torino, 2001
• [23] Boterenbrood H. and Hallgren B.: “SEE and TID Tests of the Embedded Local Monitor Board with the ATMEGA128 processor”, ATLAS DCS Internal Working Notes
• [24] Weise H.: “Introduction to Linac 2 / PIA and Linac 3”, DESY, Hamburg, June 2003
• [25] Chou H.P., Chou T.C., Hau T.H.: “Evaluation of high density DRAMs as a nuclear radiation detector” Applied Radiation and Isotopes, Volume 48, Issues 10-12, October- December 1997, pages 1601-1604
• [26] Saxena, P.K., Bhat, N.: “SEU reliability improvement due to source-side charge collection in the deep-submicron SRAM cell”, IEEE Transactions on Device and Materials Reliability, vol.3, no, 1, March 2003, pages 14-17