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Modeling and optimization of thermo-mechanical behavior of power semiconductor diodes

Autorzy
Identyfikatory
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
Thermal stresses in microelectronics are produced by the mismatch between the thermo-mechanical properties of different components in devices. This paper presents a numerical model which allows to predict and optimize a thermo-mechanical behavior of power semiconductor devices at the earlier phase of the product development processes. It is very important to provide reliability, to reduce a number of expensive physical experiments and to obtain optimal design. As the demonstrator, an soldered power semiconductor diode has been considered to show the robustness and capability of the proposed approach for transient temperature and thermal stresses characterization.
Słowa kluczowe
Rocznik
Tom
Strony
49--54
Opis fizyczny
Bibliogr. 6 poz., wykr.
Twórcy
autor
  • Lviv Polytechnic National University. Institute of Computer Science and Information Technologies. CAD Department, 12St. Bandera str., Lviv, Ukraine, 79013
  • Department of microelectronics and information system, Technical University of Lodz, Poland
autor
  • Department of microelectronics and information system, Technical University of Lodz, Poland
Bibliografia
  • [1] Z. Khatir and S. Lefebvre, “Thermal analysis of high power IGBT modules”, IEEE International Symposium on Power Semiconductor Devices & ICs, pp.271-274, 2000.
  • [2] G.Q. Zhang, J. Bisschop and P. Maessen, “Virtual Thermo- Mechanical Prototyping of Microelectronics Products-Towards Optimized Designing in Reliability”, Advancing Microelectronics, Vol. 28, № 1 , 2001.
  • [3] C.E. Hanna, S. Michaelides, P. Palaniappan, D. Baldwin and S. Sitaraman, “Numerical and Experimental Study of the Evolution of Stresses in Flip Chip Assemblies During Assembly and Thermal Cycling”, Proceedings of the 49-th Electronic Components & Technology Conference, pp. 1001-1009, San Diego, CA, 1999.
  • [4] Kovalenko A.D. Thermoelasticity. - Kiev: Vishcha Shcola, 1975 [in Russian].
  • [5] Sobol I.M., Statnikov R.B. The choice of the optimal parameters in the problems with many criterions. - M.: Nauka, 1981.- 65 p.
  • [6] Grigorenko V.P., Dermengy P.G., Kuzmin V.A., Mnatsakanov T.T. Simulation and added design of power semiconductor devices.-M.: Energoatomizdat, 1988,- 280 p.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-LOD6-0003-0048
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