Procesy wysokotemperaturowe w węgliku krzemu

• Autorzy: Kalinowski A. , Kubiak A. , Kubiak J.

Warianty tytułu

EN

High-temperature processes in silicon carbide

• Języki publikacji: PL

Abstrakty

PL

Artykuł ten porusza problem wykorzystania węglika krzemu w nowoczesnej mikroelektronice. Materiał ten posiada szereg fizycznych parametrów predysponujących go do wytwarzania nowoczesnych przyrządów półprzewodnikowych mocy, mogących ze względu na szeroką przerwę energetyczną SiC pracować w wysokich temperaturach. Duża wartość krytycznego natężenia pola przebicia pozwala na wykonywanie złącz wysokonapięciowych o napięciach przebicia przekraczających 10 kV. Prace prowadzone w Zakładzie Przyrządów Półprzewodnikowych nad węglikiem krzemu mają na celu opracowanie technologii wytwarzania złącz metodą dyfuzji termicznej.

EN

The primary goal of the paper is to present advantages of silicon carbide as a new material in modern microelectronics. Due to its unique physical parameters silicon carbide is suitable to produce semiconductor power devices working in high temperatures because of wide bandgap. The high permissible electrical field allows making high breakdown voltage junctions up to 10kV. The investigations run in Semiconductor Devices Division concern thermal diffusion technology in silicon carbide.

Słowa kluczowe

PL

mikroelektronika; proces sublimacji; dyfuzja termiczna; degradacja powierzchni; węglik krzemu

• Wydawca: Politechnika Łódzka, Instytut Elektroniki
• Czasopismo: Elektronika : prace naukowe
• Rocznik: 2005
• Tom: nr 10
• Strony: 23--34
• Opis fizyczny: Bibliogr. 45 poz.

Twórcy

autor

Kalinowski A.

• Institute of Electronics, Technical University of Łódź, 223 Wólczańska, 90-924 Łódź tel. [phone]

autor

Kubiak A.

• Institute of Electronics, Technical University of Łódź, 223 Wólczańska, 90-924 Łódź tel. [phone]

autor

Kubiak J.

• Institute of Electronics, Technical University of Łódź, 223 Wólczańska, 90-924 Łódź tel. [phone]

Bibliografia

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