Nanostructure model and optical properties of InAs/GaAs quantum dot in vertical cavity surface emitting lasers

• Autorzy: Chen J. , Fan W. J. , Ding Y. , Xu Q. , Zhang X. W. , Xu D. W. , Yoon S. F. , Zhang D. H.
• Języki publikacji: EN

Abstrakty

EN

We apply 8.band k.p model to study InAs/GaAs quantum dots (QDs). The strain was calculated using the valence force field (VFF) model which includes the four nearest.neighbour interactions. For the optical properties, we take into account both homogeneous and non.homogeneous broadening for the optical spectrum. Our simulation result is in good agreement with the experimental micro.photoluminescence (µm-PL) result which is from InAs/GaAs QD vertical cavity surface emitting lasers (VCSELs) structure wafer at room temperature. Accordingly, our simulation model is used to predict the QD emission from this QD.VCSELs structure wafer at different temperature ranging from 200–400 K. The simulation results show a decrease of 41 meV of QDground state (GS) transition energy from 250–350 K. The changes ofQDGS transition energy with different temperature indicate the possible detuning range for 1.3.µm wave band QD-VCSELs applications without temperature control. Furthermore, QD differential gain at 300 K is computed based on this model, which will be useful for predicting the intrinsic modulation characteristics of QD-VCSELs.

Słowa kluczowe

EN

band structure; k.p method; quantum dots; optical gain; vertical-cavity surface-emitting lasers (VCSELs); micro-photoluminescence

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2011
• Tom: Vol. 19, No. 4
• Strony: 449--453
• Opis fizyczny: Bibliogr. 23 poz.

Twórcy

autor

Chen J.

autor

Fan W. J.

autor

Ding Y.

autor

Xu Q.

autor

Zhang X. W.

autor

Xu D. W.

autor

Yoon S. F.

autor

Zhang D. H.

• School of Electrical and Electronic Engineering, S1-B2c-21, 50 Nanyang Ave., Nanyang Technological University, 639798 Singapore, Republic of Singapore,

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