Reverse engineering of AlxGa₁₋xAs/GaAs structures composition by reflectance spectroscopy

• Autorzy: Wośko M. , Paszkiewicz B. , Tarnowski K. , Ściana B. , Radziewicz D. , Salejda W. , Paszkiewicz R. , Tłaczała M.
• Języki publikacji: EN

Abstrakty

EN

The paper presents the application of non-modulation reflectance method for composition profiling of epitaxial AlxGa₁₋xAs/GaAs structures. This non-destructive method is based on spectral measurements and theoretical reflectance spectrum matching. This is a very accurate and sensitive method of determining the Al composition in AlxGa₁₋xAs layers and structures with resolution down to 1 nm. In this work, the authors describe theoretic principles of this method and present experimental results of characterization of different AlGaAs structures to prove the potential of the worked out method.

Słowa kluczowe

EN

photoreflectance; functionally graded materials; AlGaAs; reflectance spectroscopy

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2011
• Tom: Vol. 19, No. 4
• Strony: 418--424
• Opis fizyczny: Bibliogr. 13 poz.

Twórcy

autor

Wośko M.

autor

Paszkiewicz B.

autor

Tarnowski K.

autor

Ściana B.

autor

Radziewicz D.

autor

Salejda W.

autor

Paszkiewicz R.

autor

Tłaczała M.

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, 11/17 Janiszewskiego Str., 50-372 Wrocław, Poland,

Bibliografia

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