AP-MOVPE technology of AIIIBV-N heterostructures for photovoltaic applications

• Autorzy: Dawidowski W. , Ściana B. , Pucicki D. , Radziewicz D. , Serafińczuk J. , Latkowska M. , Tłaczała M.
• Konferencja: Proceedings of the European Summer School of Photovoltaics (04-07.07.2012 ; Kraków, Poland)
• Języki publikacji: EN

Abstrakty

EN

This paper presents the influence of the AP-MOVPE epitaxial process growth temperature on the optical and structural properties of heterostructures containing InGaAsN quantum wells. The best optical and structural features were observed for MQW structure grown in highest temperature. This structure (sample NI 46) was applied in the test p-i-n solar cell construction. Measured dc I-V characteristics exhibit electrical response under the optical excitation by a discrete laser diode with λ = 980 nm, what confirms the usability of InGaAsN semiconductor compounds in solar cell applications.

Słowa kluczowe

EN

solar cells; photovoltaics

PL

ogniwa słoneczne; fotowoltaika

• Wydawca: Wydawnictwo SIGMA-NOT
• Czasopismo: Elektronika : konstrukcje, technologie, zastosowania
• Rocznik: 2012
• Tom: Vol. 53, nr 6
• Strony: 111--113
• Opis fizyczny: Bibliogr. 9 poz., wykr.

Twórcy

autor

Dawidowski W.

autor

Ściana B.

autor

Pucicki D.

autor

Radziewicz D.

autor

Serafińczuk J.

autor

Latkowska M.

autor

Tłaczała M.

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology

Bibliografia

• [1] Kondow M. et al.: GaInNAs: A Novel Material for Long-Wavelength Semiconductor Lasers. IEEE J. Select. Topic Quantum Electron. 3 (719), 1997.
• [2] Wei S., A. Zunger: Giant and Composition-Dependent Optical Bowing Coefficient in GaAsN Alloys. Phys. Rev. Lett. 76, 664-667, 1996.
• [3] Buyanova I., W. Chen [eds]: Physics and Applications of Dilute Nitrides. Garland Science, 2004.
• [4] Erol A. [ed]: Dilute III-V Nitride Semiconductors and Material Systems: Physics and Technology. Springer, 2008.
• [5] Chang P. et al.: InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor. Appl. Phys. Lett. 76, 2262, 2000.
• [6] Kurtz S. et al.: InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs. Appl. Phys. Lett. 74, 729, 1999.
• [7] Gambin V., PhD thesis: Long wavelength luminescence from Galn-NAsSb on GaAs. Stanford University, 2002.
• [8] Buyanova I., W. Chen, C. Tu, “Defects in dilute nitrides”, J. Phys.: Condens. Matter 16 S3027, 2004.
• [9] Dawidowski W. et al.: Application of InGaAsN in construction of p-i-n solar cell. Elektronika - konstrukcje, technologie, zastosowania, in press.