Tytuł artykułu
Identyfikatory
Warianty tytułu
Konferencja
Proceedings of the European Summer School of Photovoltaics (04-07.07.2012 ; Kraków, Poland)
Języki publikacji
Abstrakty
In summary, we present in this study the results of studies on the layers of GaAs1-xNx grown on n-type GaAs substrates by atmospheric pressure metal organic vapour phase epitaxy (APMOVPE), Using transmittance, reflectance, photocurrent measurements and empirical expression for Eg a new nitrogen content for the studies samples was obtained. Using dark and illuminated I-V characteristics the main parameters of the Schottky contacts (short-circuit current Isc, open circuit-voltage, Voc, and fill factor, FF) were determined. Obtained contacts are promising for solar cell application.
Słowa kluczowe
Wydawca
Rocznik
Tom
Strony
109--110
Opis fizyczny
Bibliogr. 7 poz., rys., wykr.
Twórcy
autor
autor
autor
autor
autor
autor
- Institute of Physics, Wrocław University of Technology
Bibliografia
- [1] Kondow M. et al.: Japan. J. Appl. Phys. 35, 1273 (1996).
- [2] Nakahara K. et al.: IEEE Photonics Technol. Lett. 10, 487 (1998).
- [3] Friedman D. J. et al.: J. Cryst. Growth 195, 409 (1998).
- [4] Kurtz S. R. et al.: 26th IEEE PVSEC (1997) 875.
- [5] Taliercio T., R. Intartaglia, B. Gil, P. Lefebvre, T. Bretagnon, U. Tisch, E. Finkman, J. Salzman, M.-A. Pinault, M. Laugt and E. Tournie: Phys. Rev. B 69, (2004) 073303.
- [6] Zhang Y., A. Mascarenhas, H. P. Xin, and C. W. Tu: Phys. Rev. B 63, (2001) 161303.
- [7] Suzuki H., K. Nishimura, T. Hashiguchi, K. Saito, B. Balasubramanian, S. Yamamoto, M. Inagaki, Y. Ohshita, N. Kojima and M. Yamaguchi: Fabrication of GaAsN homo-junction solar cells by chemical beam epitaxy, Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BWAN-0018-0042