Powiadomienia systemowe
- Sesja wygasła!
Tytuł artykułu
Autorzy
Identyfikatory
Warianty tytułu
Impurities of gettered multicrystalline silicon
Języki publikacji
Abstrakty
W pracy określono zawartość żelaza międzywęzłowego (Fe i) w mc-Si po procesie geterowania fosforem oraz ujawniono występowanie akceptorowego poziomu rekombinacyjnego o energii aktywacji Ev = +0,338 eV stosując pomiary Laplace DLTS.
The interstitial iron (Fe i ) content in multicrystalline silicon (mc-Si) after phosphorous gettering was determined and acceptor recombination level with activation energy Ev = +0.338 eV was detected by Laplace DLTS measurements.
Wydawca
Rocznik
Tom
Strony
17--20
Opis fizyczny
Bibliogr. 15 poz., wykr.
Twórcy
autor
autor
autor
- Instytut Technologii Elektronowej, Warszawa
Bibliografia
- [1] Macdonald D., Cuevas A.: Trapping of minority carriers in multicrystalline silicon. Appl. Phys. Letter, vol. 74, no. 12, (1999) 1710-1712.
- [2] Macdonald D., Cuevas A., Wong-Leung J.: Capture cross sections of the acceptor level of iron-boron pairs in p-type silicon by injection-level dependent lifetime measurements. Journal of Applied Physics, 89 (12), (2001) 7932-7939.
- [3] Schmidt J.: Temperature and injection-dependent lifetime spectroscopy for the characterization of defect centers in semiconductors. Appl. Phys. Letters, 82, 13, (2003) 2178-2180.
- [4] Birkholz J. E.: Electronic properties of iron-boron pairs in crystalline silicon by temperature and injection-level-dependent lifetime measurements. J. Appl. Phys. 97 (2005) 103708.
- [5] Istratov A. A., Buonassisi T., Pickett MD., Heuer M., Weber E. R.: Control of metal impurities in “dirty” multicrystalline silicon for solar cells. Materials Science and Egineering B 134 (2006) 282-286.
- [6] Cuevas A.: Multicrystalline silicon: The Photovoltaic material by excellence. Materials Forum vol. 27 (2004) 1-8.
- [7] Martin I.: Crystalline silicon surface passivation with amorphous SiC:H films deposit by plasma-enhanced chemical-vapor deposition. J. Appl. Phys. 98 (2005) 114912.
- [8] Manshanden P., Geerligs L. F.: Effective and practical phosphorous gettering of multicrystalline silicon. 20th European Photovoltaic Solar Energy Conference, Barcelona, Spain 6-10 June 2005.
- [9] Tan J., Macdonald D., Bennet N., Kong D., Cuevas A.: Dissolution of metal precipitates in multicrystalline silicon during annealing and the protective effect of phosphorus emitters. Apl. Phys. Letters 91, (2007) 043505.
- [10] Macdonald D., Geerligs L. J.: Recombination activity of iron and other transition metals p-and n-type crystalline silicon, J. Appl. Phys. 95 (2004) 1021.
- [11] Palais O., Martinuzzi M., Simon J. J.: Minority carrier liftime and metallic-impurity mapping in silicon wafers. Materials Science in Semiconductor Processing 4 (2001) 2729.
- [12] Dubois S., Palais O., Ribeyron P., Enjalbert N., Pasquinelli M., Martinuzzi N.: Effect of international blk contamination with iron on multicrystalline silicon solar cell properties. J. Appl. Phys. 102, (2007) 083525.
- [13] Kaniava A., Rotondaro A. L. P., Vanhellemont J., Menczigar U., Gaubas E.: Recombination activity of iron-related complexes in silicon studied by temperature dependent carrier lifetime measurements. Appl. Phys Lett. 67 (26) (2005) 3930-3932.
- [14] Warta W.: Defect and impurity diagnostics and process monitoring. Solar Energy Materials and Solar Cells, (2002) 2486.
- [15] Istratov A. A., Hieslmair H., Weber E. R.: Iron and its complexes in silicon. Appl Phys. A 69 (1999) 13-44.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BWAN-0008-0002