Zanieczyszczenia multikrystalicznego krzemu modyfikowanego procesem geterowania

• Autorzy: Piotrowski T. , Kruszewski P. , Lipiński M.

Warianty tytułu

EN

Impurities of gettered multicrystalline silicon

• Języki publikacji: PL

Abstrakty

PL

W pracy określono zawartość żelaza międzywęzłowego (Fe i) w mc-Si po procesie geterowania fosforem oraz ujawniono występowanie akceptorowego poziomu rekombinacyjnego o energii aktywacji Ev = +0,338 eV stosując pomiary Laplace DLTS.

EN

The interstitial iron (Fe i ) content in multicrystalline silicon (mc-Si) after phosphorous gettering was determined and acceptor recombination level with activation energy Ev = +0.338 eV was detected by Laplace DLTS measurements.

Słowa kluczowe

PL

generowanie; DLTS; krzem multikrystaliczny; zanieczyszczenia w mc-Si

EN

gettering; DLTS; multicrystalline silicon; impurities in mc-Si

• Wydawca: Wydawnictwo SIGMA-NOT
• Czasopismo: Elektronika : konstrukcje, technologie, zastosowania
• Rocznik: 2011
• Tom: Vol. 52, nr 4
• Strony: 17--20
• Opis fizyczny: Bibliogr. 15 poz., wykr.

Twórcy

autor

Piotrowski T.

autor

Kruszewski P.

autor

Lipiński M.

• Instytut Technologii Elektronowej, Warszawa

Bibliografia

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