Defects in quantum dots of IIB-VI semiconductors

• Autorzy: Babentsov V. , Sizov F.
• Języki publikacji: EN

Abstrakty

EN

This review discusses the properties of structural defects in quantum dots of IIB-VI semiconductors. A great part of this knowledge has been developed in the last years and combined with the improvement in passivation technologies has contributed significantly to the nanotechnology. In this review we introduced the main characterization methods which are used for the study of defects in the nanoform of semiconductors, presented a short description of how native defects can influence the emission spectra, underlined the restrictions which the Auger and deep-level defect recombination imposes on the excitonic emission. We also highlighted the importance of the defect passivation associated with efficiency and photostability of devices.

Słowa kluczowe

EN

quantum dots; compund semiconductors; quantum dot characterization methods; Auger and deep-level recombinations

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2008
• Tom: Vol. 16, No. 3
• Strony: 208--225
• Opis fizyczny: Bibliogr. 85 poz., wykr.

Twórcy

autor

Babentsov V.

autor

Sizov F.

• Institute of Semiconductor Physics, Pr. Nauki 41, 03028 Kiev, Ukraine

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