Investigation of substrate noise coupling and isolation characteristics for a 0,35 μm HV CMOS technology

• Autorzy: Pflanzl W. C. , Seebacher E.
• Języki publikacji: EN

Abstrakty

EN

This paper presents the characterization of substrate noise coupling and the isolation capability of ohmic substrate contacts in a HV CMOS technology. Layout variations of contact sizes, distances, and several p+ guard structures are subject of this research. Metal shielded DUT fixtures have been developed to improve the reliability and accuracy of the measurements. All test cases are fabricated with a 0.35 μm HV CMOS technology (Vmax <= 120V). This process features high resistive native substrate (20 Ohm.cm) together with a 0.5 Ohm.cm pwell. The modeling section describes the distributed substrate "resistor" and the DUT fixture behavior.

Słowa kluczowe

EN

substrate coupling; isolation; guard ring; HV CMOS

PL

izolowanie; pierścień ochronny

• Wydawca: Polish Academy of Sciences, Committee of Electronics and Telecommunication
• Czasopismo: Electronics and Telecommunications Quarterly
• Rocznik: 2007
• Tom: Vol. 53, No 4
• Strony: 379--388
• Opis fizyczny: Bibliogr. 13 poz., rys.

Twórcy

autor

Pflanzl W. C.

autor

Seebacher E.

• Walter C. Pflanzl, Ehrenfried Seebacher are with austriamicrosystems AG,Schloss Premstaetten, A-8141 Unterpremstaetten, Austria,

Bibliografia

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