Electrical properties of HgCdTe films grown by MOCVD and doped with as

• Autorzy: Izhnin I. I. , Savytskyy H. V. , Fitsych O. I. , Piotrowski J. , Mynbaev K. D.
• Języki publikacji: EN

Abstrakty

EN

Electrical properties of HgCdTe films grown by metal-organic chemical vapour deposition (MOCVD) on GaAs substrates and doped with the As acceptor during the growth were studied. Discrete mobility spectrum analysis was used to extract the parameters of the as-grown films and films after ion milling and during prolonged relaxation of milling-induced defects. The measurements revealed significant compensation of the as-grown MOCVD HgCdTe with As on Te sites being the main defect, residual donor concentration of the order of (2-5)x10¹⁵ cm⁻³ and the presence of some unidentified defects.

Słowa kluczowe

EN

MOCVD; HgCdTe; As doping; electrical properties

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2013
• Tom: Vol. 21, No. 2
• Strony: 220--226
• Opis fizyczny: Bibliogr. 21 poz., wykr.

Twórcy

autor

Izhnin I. I.

autor

Savytskyy H. V.

autor

Fitsych O. I.

autor

Piotrowski J.

autor

Mynbaev K. D.

• R&D Institute for Materials SRC "Carat", 202 Stryjska Str., 79031 Lviv, Ukraine,

Bibliografia

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