Sub-THz radiation room temperature sensitivity of long-channel silicon field effect transistors

• Autorzy: Sizov F. , Golenkov A. , But D. , Sakhno M. , Reva V.
• Języki publikacji: EN

Abstrakty

EN

Room temperature operating n-MOSFETs (n-type metal-oxide silicon field effect transistors) used for registration of sub-THz (sub-terahertz) radiation in the frequency range v = 53-145 GHz are considered. n-MOSFETs were manufactured by 1-µm Si CMOS technology applied to epitaxial Si-layers (d ≈15 µm) deposited on thick Si substrates (d = 640 µm). It was shown that for transistors with the channel width to length ratio W/L = 20/3 µm without any special antennas used for radiation input, the noise equivalent power (NEP) for radiation frequency v ≈76 GHz can reach NEP ∼6x10⁻¹⁰ W/Hz¹/². With estimated frequency dependent antenna effective area Sest for contact wires considered as antennas, the estimated possible noise equivalent power NEPpos for n-MOSFET structures themselves can be from ∼15 to ∼10³ times better in the specral range of v ∼55-78 GHz reaching NEPpos ≈10⁻¹² W/Hz¹/².

Słowa kluczowe

EN

n-MOSFETs; sub-THz detectors; NEP

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2012
• Tom: Vol. 20, No. 2
• Strony: 194--199
• Opis fizyczny: Bibliogr. 18 poz., il., rys., wykr.

Twórcy

autor

Sizov F.

autor

Golenkov A.

autor

But D.

autor

Sakhno M.

autor

Reva V.

• Institute of Semiconductor Physics, 41 Nauki Ave., 03028 Kiev, Ukraine,

Bibliografia

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