Properties of a-Si:N:H films beneficial for silicon solar cells applications

• Autorzy: Swatowska B. , Stapiński T. , Zimowski S.
• Języki publikacji: EN

Abstrakty

EN

Amorphous silicon-nitride thin films a-Si:N:H were obtained by plasma enhanced chemical vapour deposition (PECVD) method from SiH₄+NH₃ at 13.56 MHz. The process parameters were chosen to obtain the films of properties suitable for optoelectronic and mechanical applications. FTIR analysis of a-Si:N:H films indicated the presence of numerous hydrogen bonds (Si-H and N-H) which passivate structural defects in multicrystalline silicon and react with impurities. The morphological investigations show that the films are homogeneous. The deposition of a-Si:N:H layers leads to the decrease in friction coefficient of used substrates. Optical properties were optimised to obtain the films of low effective reflectivity, large energy gap Eg from 2.4 to 2.9 eV and refractive index in the range of 1.9 to 2.2. Reduction of friction coefficient for monocrystalline silicon after covering with a-Si:N:H films was observed: from 0.25 to 0.18 for 500 cycles.

Słowa kluczowe

EN

PECVD; amorphous Si:N:H; protective properties; antireflective coatings (ARC)

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2012
• Tom: Vol. 20, No. 2
• Strony: 168--173
• Opis fizyczny: Bibliogr. 18 poz., il., wykr.

Twórcy

autor

Swatowska B.

autor

Stapiński T.

autor

Zimowski S.

• Department of Electronics, AGH University of Science and Technology, 30 Mickiewicza Ave., 30-059 Cracow, Poland,

Bibliografia

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