Type-II InAs/GaSb photodiodes and focal plane arrays aimed at high operating temperatures

• Autorzy: Razeghi M. , Abdollahi Pour S. , Huang E. K. , Chen G. , Haddadi A. , Nguyen B. M.
• Języki publikacji: EN

Abstrakty

EN

Recent efforts to improve the performance of type II InAs/GaSb superlattice photodiodes and focal plane arrays (FPA) have been reviewed. The theoretical bandstructure models have been discussed first. A review of recent developments in growth and characterization techniques is given. The efforts to improve the performance of MWIR photodiodes and focal plane arrays (FPAs) have been reviewed and the latest results have been reported. It is shown that these improvements has resulted in background limited performance (BLIP) of single element photodiodes up to 180 K. FPA shows a constant noise equivalent temperature difference (NEDT) of 11 mK up to 120 K and it shows human body imaging up to 170 K.

Słowa kluczowe

EN

type II superlattice; InAs/GaSb; m-structure; photodetectors; MWIR; focal plane arrays

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2011
• Tom: Vol. 19, No. 3
• Strony: 261--269
• Opis fizyczny: Bibliogr. 13 poz., il., wykr.

Twórcy

autor

Razeghi M.

autor

Abdollahi Pour S.

autor

Huang E. K.

autor

Chen G.

autor

Haddadi A.

autor

Nguyen B. M.

• Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208, USA,

Bibliografia

• [1] G.A. Sai-Halasz, R. Tsu, and L. Esaki, “A new semiconductor superlattice”, Appl. Phys. Lett. 30, 651-653 (1977).
• [2] M. Razeghi, US Patent 6864552, “Focal plane arrays in type-II superlattices”, 2005.
• [3] H. Mohseni, V.I. Litvinov, and M. Razeghi, “Interface-in-duced suppression of the Auger recombination in type-II InAs/GaSb superlattices”, Phys. Rev. B58, 15378 (1998).
• [4] B.M. Nguyen, M. Razeghi, V. Nathan, and G.J. Brown, “Type-II M structure photodiodes: an alternative material design for mid-wave to long wavelength infrared regimes”, Proc. SPIE 6479, 6490S (2007).
• [5] Y. Wei and M. Razeghi, “Modelling of type-II InAs/GaSb superlattices using an empirical tight-binding method and interface engineering”, Phys. Rev. B69, 085316-7 (2004).
• [6] A. Hood, D. Hoffman, Y. Wei, F. Fuchs, and M. Razeghi, “Capacitance-voltage investigation of high-purity InAs/GaSb superlattice photodiodes”, Appl. Phys. Lett. 88, 052112-3 (2006).
• [7] F. Fuchs, D. Hoffmann, A. Gin, A. Hood, Y. Wei, and M. Razeghi, “Negative luminescence of InAs/GaSb superlattice photodiodes”, Phys. Status Solidi (c) 3, 444-447 (2006).
• [8] D. Hoffman, A. Hood, E. Michel, F. Fuchs, and M. Razeghi, “Electroluminescence of InAs-GaSb heterodiodes”, IEEE J. Quantum Elect. 42, 126-130 (2006).
• [9] A. Hood, D. Hoffman, B.M. Nguyen, P.Y. Delaunay, E. Michel, and M. Razeghi, “High differential resistance type-II InAs/GaSb superlattice photodiodes for the long-wavelength infrared”, Appl. Phys. Lett. 89, 093506-3 (2006).
• [10] D. Hoffman, B.M. Nguyen, P.Y. Delaunay, A. Hood, M. Razeghi, and J. Pellegrino, “Beryllium compensation doping of InAs/GaSb infrared superlattice photodiodes”, Appl. Phys. Lett. 91, 143507-3 (2007).
• [11] B.M. Nguyen, D. Hoffman, P.Y. Delaunay, and M. Razeghi, “Dark current suppression in type II InAs/GaSb superlattice long wavelength infrared photodiodes with M-structure barrier”, Appl. Phys. Lett. 91, 163511-3 (2007).
• [12] Y. Wei and M. Razeghi, “Modelling of type-II InAs/GaSb superlattices using an empirical tight-binding method and interface engineering”, Phys. Rev. B69, 085316 (2004).
• [13] B.M. Nguyen, D. Hoffman, P.Y. Delaunay, M. Razeghi, and V. Nathan, “Polarity inversion of type II InAs/GaSb superlattice photodiodes”, Appl. Phys. Lett. 91, 103503-3 (2007).