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Abstrakty
A mathematical model for multi-element IR FPAs based on Hg1-xCdxTe photodiodes with direct-injection readout circuits is developed. This model was used to identify the main factors that limit the performance characteristics of thermography systems based on such FPAs.
Wydawca
Czasopismo
Rocznik
Tom
Strony
198--205
Opis fizyczny
Bibliogr. 22 poz., il., wykr.
Twórcy
autor
autor
autor
- Institute of Semiconductor Physics, Ukraine National Academy of Sciences, Kiev, 03028 41 Nauki Av., Ukraine
autor
Bibliografia
- [1] A. Rogalski, Infrared Detectors, Gordon and Breach Science Publishers, Amsterdam, 2000.
- [2] P. Felix, M. Moulin, B. Munier, J. Portmann, and J. Rebould: CCD readout of infrared hybrid focal - plane arrays. IEEE T. Electron Dev. 27, 175-188, 1980.
- [3] J.T. Longo, D.T. Cheung, A.M. Andrews, C.C. Wang, and J.M. Tracy: Infrared focal plane in intrinsic semiconductors. IEEE J. Solid-St. Circ. 13, 139-157, 1978.
- [4] G.R. Kunakbaeva, I.I. Lee, and E.I. Cherepov: The system photodiode - direct-injection input CCD' for multi-element FPAs. Radiotekh. i Electron. 5, 922-930, 1993.
- [5] G.R. Kunakbaeva and I.I. Lee: Selection of the spectral range for infrared vision systems based on CdxHg1-xTe multielement photodiodes. Optoelectronics, Instrumentation and Data Processing 5, 19-26, 1996.
- [6] W.W. Anderson: Tunnel contribution to Hg1-xCdxTe and Pb1-xSnxTe p-n junction diode characteristics. Infrared Phys. 20, 353-361, 1981.
- [7] W.W. Anderson and H.J. Hoffman: Field ionization of deep levels in semiconductors with applications to Hg1-xCdxTe p-n junctions. J. Appl. Phys. 53, 9130-9145, 1982.
- [8] J.V. Gumenjuk-Sichevska and F.F. Sizov: Currents in narrow-gap photodiodes. Semicond. Sci. Tech. 14, 1124-1133, 1999.
- [9] F. Sizov, I. Lysiuk, J. Gumenjuk-Sichevska, S.G. Bunchuk, and V.V. Zabudsky: Gamma radiation exposure of MCT diode arrays. Semicond. Sci. Tech. 21, 356-363, 2006.
- [10] J. Yoshino, J. Morimoto, H. Wada, A. Ajisawa, M. Kawano, and N. Oda: Studies of relationship between deep levels and RA product in mesa type HgCdTe devices. Opto-Electron. Rev. 7, 361-367, 1999.
- [11] S. Krishnamurthy, M.A. Berding, H. Robinson, and A. Sher: Tunnelling in long-wavelength infrared HgCdTe photodiodes. J. Electron. Mater. 35, 1399-1402, 2006.
- [12] R. Overstraeten, G. Declerck, and P. Muls: Theory of the MOS transistor in weak inversion - new method to determine the number of surface states. IEEE T. Electron Dev. 22, 282-288, 1975.
- [13] M. Buckingham, Noise in Electronic Devices and Systems, Ellis Horwood Ltd, 1983.
- [14] K. Chow, J. Roud, D. Sub, and J. Blackwell: Hybrid infrared focal-plane arrays”, IEEE T. Electron Dev. 29, 3-13, 1982.
- [15] G. Reimbold: Modified 1/f trapping noise theory and experiments in MOS transistors biased from weak to strong inversion - influence of interface states. IEEE T. Electron Dev. 31, 1190-1198, 1984.
- [16] J. Woolaway: New sensor technology for the 3-to-5 µm imaging band. Photon. Spectra 25, 113-119, 1991.
- [17] I.I. Taubkin and M.A Trishenkov: Minimum temperature difference resolvable with the IR imaging method. Opticheskii Zhurnal 5, 20-23, 1993.
- [18] I.I. Lee: A new readout circuit for long-wavelength IR FPA. Infrared Phys. Techn. 53, 140-145, 2010.
- [19] V. Gopal: Spatial noise limited NETD performance of an HgCdTe hybrid focal plane array. Infrared Phys. Techn. 37, 313-320, 1996.
- [20] F. Pistone, P. Tribolet, and M. Vuillermet: High resolution staring arrays answering compact MV and LV applications. Opto-Electron. Rev. 14, 109-118, 2006.
- [21] A. Rogalski: New material for third generation infrared photodetectors. Opto-Electron. Rev. 16, 458-482, 2008.
- [22] J.D. Phillips, D.D. Edwall, and D.L. Lee: Control of very-long-wavelength infrared HgCdTe detector-cutoff wavelength. J. Electron. Mater. 31, 664-668, 2002.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BWAD-0022-0012