Infrared photodetectors based on the system: Hg1-xCdxTe photodiode : direct-injection readout circuit.

• Autorzy: Gumenjuk-Sichevska J. V. , Karnaushenko D. D. , Lee I. I. , Polovinkin V. G.
• Języki publikacji: EN

Abstrakty

EN

A mathematical model for multi-element IR FPAs based on Hg1-xCdxTe photodiodes with direct-injection readout circuits is developed. This model was used to identify the main factors that limit the performance characteristics of thermography systems based on such FPAs.

Słowa kluczowe

EN

Hg1-xCdxTe photodiode; multi-element IR FPA; direct-injection readout circuit; thermography system

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2011
• Tom: Vol. 19, No. 2
• Strony: 198--205
• Opis fizyczny: Bibliogr. 22 poz., il., wykr.

Twórcy

autor

Gumenjuk-Sichevska J. V.

autor

Karnaushenko D. D.

autor

Lee I. I.

• Institute of Semiconductor Physics, Ukraine National Academy of Sciences, Kiev, 03028 41 Nauki Av., Ukraine

autor

Polovinkin V. G.

Bibliografia

• [1] A. Rogalski, Infrared Detectors, Gordon and Breach Science Publishers, Amsterdam, 2000.
• [2] P. Felix, M. Moulin, B. Munier, J. Portmann, and J. Rebould: CCD readout of infrared hybrid focal - plane arrays. IEEE T. Electron Dev. 27, 175-188, 1980.
• [3] J.T. Longo, D.T. Cheung, A.M. Andrews, C.C. Wang, and J.M. Tracy: Infrared focal plane in intrinsic semiconductors. IEEE J. Solid-St. Circ. 13, 139-157, 1978.
• [4] G.R. Kunakbaeva, I.I. Lee, and E.I. Cherepov: The system photodiode - direct-injection input CCD' for multi-element FPAs. Radiotekh. i Electron. 5, 922-930, 1993.
• [5] G.R. Kunakbaeva and I.I. Lee: Selection of the spectral range for infrared vision systems based on CdxHg1-xTe multielement photodiodes. Optoelectronics, Instrumentation and Data Processing 5, 19-26, 1996.
• [6] W.W. Anderson: Tunnel contribution to Hg1-xCdxTe and Pb1-xSnxTe p-n junction diode characteristics. Infrared Phys. 20, 353-361, 1981.
• [7] W.W. Anderson and H.J. Hoffman: Field ionization of deep levels in semiconductors with applications to Hg1-xCdxTe p-n junctions. J. Appl. Phys. 53, 9130-9145, 1982.
• [8] J.V. Gumenjuk-Sichevska and F.F. Sizov: Currents in narrow-gap photodiodes. Semicond. Sci. Tech. 14, 1124-1133, 1999.
• [9] F. Sizov, I. Lysiuk, J. Gumenjuk-Sichevska, S.G. Bunchuk, and V.V. Zabudsky: Gamma radiation exposure of MCT diode arrays. Semicond. Sci. Tech. 21, 356-363, 2006.
• [10] J. Yoshino, J. Morimoto, H. Wada, A. Ajisawa, M. Kawano, and N. Oda: Studies of relationship between deep levels and RA product in mesa type HgCdTe devices. Opto-Electron. Rev. 7, 361-367, 1999.
• [11] S. Krishnamurthy, M.A. Berding, H. Robinson, and A. Sher: Tunnelling in long-wavelength infrared HgCdTe photodiodes. J. Electron. Mater. 35, 1399-1402, 2006.
• [12] R. Overstraeten, G. Declerck, and P. Muls: Theory of the MOS transistor in weak inversion - new method to determine the number of surface states. IEEE T. Electron Dev. 22, 282-288, 1975.
• [13] M. Buckingham, Noise in Electronic Devices and Systems, Ellis Horwood Ltd, 1983.
• [14] K. Chow, J. Roud, D. Sub, and J. Blackwell: Hybrid infrared focal-plane arrays”, IEEE T. Electron Dev. 29, 3-13, 1982.
• [15] G. Reimbold: Modified 1/f trapping noise theory and experiments in MOS transistors biased from weak to strong inversion - influence of interface states. IEEE T. Electron Dev. 31, 1190-1198, 1984.
• [16] J. Woolaway: New sensor technology for the 3-to-5 µm imaging band. Photon. Spectra 25, 113-119, 1991.
• [17] I.I. Taubkin and M.A Trishenkov: Minimum temperature difference resolvable with the IR imaging method. Opticheskii Zhurnal 5, 20-23, 1993.
• [18] I.I. Lee: A new readout circuit for long-wavelength IR FPA. Infrared Phys. Techn. 53, 140-145, 2010.
• [19] V. Gopal: Spatial noise limited NETD performance of an HgCdTe hybrid focal plane array. Infrared Phys. Techn. 37, 313-320, 1996.
• [20] F. Pistone, P. Tribolet, and M. Vuillermet: High resolution staring arrays answering compact MV and LV applications. Opto-Electron. Rev. 14, 109-118, 2006.
• [21] A. Rogalski: New material for third generation infrared photodetectors. Opto-Electron. Rev. 16, 458-482, 2008.
• [22] J.D. Phillips, D.D. Edwall, and D.L. Lee: Control of very-long-wavelength infrared HgCdTe detector-cutoff wavelength. J. Electron. Mater. 31, 664-668, 2002.