Determination of energy difference and width of minibands in GaAs/AlGaAs superlattices by using Fourier transform photoreflectance and photoluminescence

• Autorzy: Motyka M. , Janiak F. , Misiewicz J. , Wasiak M. , Kosiel K. , Bugajski M.
• Konferencja: The International Conference on Semiconductor Mid-IR Materials and Optiics (SMMO 2010) ; (21-23.10.2010 ; Warsaw, Poland)
• Języki publikacji: EN

Abstrakty

EN

In this work, Fourier transform photoreflectance (in a form of fast differential reflectance spectroscopy) has been used to study the interband optical transitions in molecular beam epitaxially grown GaAs/AlGaAs superlattices. The dependence of the measured features on the growth parameters (QW and barrier widths) has been studied. The minibands widths and energy differences between them have been obtained and matched to these coming from effective mass calculations. In addition, it has been shown that Fourier transform photoluminescence measurement might be used in the far infrared region (up to ∼15 µm) to the direct detection of the energies of intraband transitions between the electron minibands (subbands) in the superlattice and QW system.

Słowa kluczowe

EN

superlattices; Fourier transform photoreflectance; FTIR photoluminescence

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2011
• Tom: Vol. 19, No. 2
• Strony: 151--154
• Opis fizyczny: Bibliogr. 17 poz., il., wykr.

Twórcy

autor

Motyka M.

autor

Janiak F.

autor

Misiewicz J.

autor

Wasiak M.

autor

Kosiel K.

autor

Bugajski M.

• Institute of Physics, Wrocław University of Technology, 27 Wybrzeże Wyspiańskiego Str., 50-370 Wrocław, Poland,

Bibliografia

• [1] N. Nakayama, T. Fujita, and H. Nishimura: Photoreflectance study of folded above-barriers states in (InAs)/(GaAs) strained layer superlattices. Superlattice. Microst. 17, 31-34, 1995.
• [2] S.M. Cao, M. Willander, A.A. Toropov, T.V. Shubina, B.YA. Mel'tser, S.V. Shaposhnikov, P.S. Kop'ev, J.P. Bergman, P.O. Holtz, and B. Monemar: Characterization of Al0.4Ga0.6As/GaAs aperiodic superlattices by photoluminescence spectroscopy at 2 K. Superlattice. Microst. 20, 229-235, 1996.
• [3] K. Tamura, K. Hirakawa, and Y. Shimada: Drude absorption and electron localization in GaAs/AlGaAs superlattices. Physica B272, 183-186, 1999.
• [4] Y.A. Mityagin, V.N. Murzin, and M.P. Telenkov: Resonant tunnelling in weakly coupled GaAs/AlGaAs superlattices in a transverse magnetic field: A probe of electronic distribution function. Physica E32, 297-300, 2006.
• [5] L. Smrcka, N.A. Goncharuk, P. Svoboda, P. Vasek, Y. Krupko, and W. Wegscheider: Electron magnetotransport in GaAs/AlGaAs superlattices with weak and strong inter-well coupling. Microelectron. J. 39, 411-413, 2008.
• [6] J. Faist, F. Capasso, D.L. Sivco, C. Sirtori, A.L. Hutchinson, and A.Y. Cho: Quantum cascade laser. Science 264, 553-556, 1994.
• [7] C. Sirtori, P. Kruck, S. Barbieri, P. Collot, J. Nagle, M. Beck, J. Faist, and U. Oesterle: GaAs/AlxGa1-x as quantum cascade lasers. Appl. Phys. Lett. 73, 3486-3488, 1998.
• [8] H. Page, C. Becker, A. Robertson, G. Glastre, V. Ortiz, and C. Sirtori: 300-K operation of a GaAs-based quantum-cascade laser at λ = 9 µm. Appl. Phys. Lett. 78, 3529-3531, 2001.
• [9] K. Kosiel, J. Kubacka-Traczyk, P. Karbownik, A. Szerling, J. Muszalski, M. Bugajski, P. Romanowski, J. Gaca, and M. Wójcik: Molecular-beam epitaxy growth and characterization of mid-infrared quantum cascade laser structures. Microelectron. J. 40, 565-569, 2009.
• [10] K. Kosiel: MBE-technology for nanoelectronics. Vacuum 82, 951-955, 2008.
• [11] F.H. Pollak, in Handbook on Semiconductors, Vol. 2, pp. 527-635, edited by T.S. Moss, Elsevier Science, Amsterdam, 1994.
• [12] M. Motyka and J. Misiewicz: Fast differential reflectance spectroscopy of semiconductor structures for infrared applications by using Fourier transform spectrometer. Appl. Phys. Express 3, 112401, 2010.
• [13] M. Motyka, G. Sęk, J. Misiewicz, A. Bauer, M. Dallner, S. Höfling, and A. Forchel: Fourier transformed photoreflectance and photoluminescence of mid infrared GaSb-based type II quantum wells. Appl. Phys. Express 2, 126505, 2009.
• [14] S. Adachi, Properties of Aluminium Gallium Arsenide, INSPEC, London, 1993.
• [15] J. Shao, F. Yue, X. Lü, W. Lu, W. Huang, Z. Li, S. Guo, and J. Chu: Photomodulated infrared spectroscopy by a step-scan Fourier transform infrared spectrometer. Appl. Phys. Lett. 89, 182121, 2006.
• [16] S. Sauvage, Z. Moussa, P. Boucaud, F.H. Julien, V. Berger, and J. Nagle: Room temperature infrared intersubband photoluminescence in GaAs quantum wells. Appl. Phys. Lett. 70, 1345, 1997.
• [17] M. Tchernycheva, L. Nevou, L. Doyennette, F.H. Julien, F. Guillot, E. Monroy, T. Remmele, and M. Albrecht: Electron confinement in strongly coupled GaN/AlN quantum wells. Appl. Phys. Lett. 88, 153113, 2006.