Study of MOCVD growth of InGaAsSb/AlGaAsSb/GaSb heterostructures using two different aluminium precursors TMAl and DMEAAl

• Autorzy: Wesołowski M. , Strupiński W. , Motyka M. , Sęk G. , Dumiszewska E. , Caban P. , Jasik A. , Wójcik A. , Pierściński K. , Pierścińska D.
• Konferencja: The International Conference on Semiconductor Mid-IR Materials and Optiics (SMMO 2010) ; (21-23.10.2010 ; Warsaw, Poland)
• Języki publikacji: EN

Abstrakty

EN

The antimonide laser heterostructures growth technology using MBE epitaxy is currently well-developed, while MOVPE method is still being improved. It is known that the principal problem for MOVPE is the oxygen and carbon contamination of aluminium containing waveguides and claddings. The solution would be to apply a proper aluminium precursor. In this study we present the results of metal-organic epitaxy of In- and Al-containing layers and quantum well structures composing antimonide lasers devices. Special emphasis was put on the aluminium precursor and its relation to AlGaSb and AlGaAsSb materials properties. The crystalline quality of the layers grown with two different Al precursors was compared, very good structural quality films were obtained. The results suggested a substantial influence of precursors pre-reactions on the epitaxial process. The oxygen contamination was measured by SIMS, which confirmed its dependence on the precursor choice. We also optimised the GaSb substrate thermal treatment to deposit high quality GaSb homoepitaxial layers. Quaternary InGaAsSb layers were obtained even within the predicted miscibility gap, when arsenic content reached high above 10% values. InGa(As)Sb/AlGa(As)Sb quantum wells were grown and their optical properties were characterised by photoluminescence and photoreflectance spectroscopy. Type-I quantum wells showed a fundamental optical transition in the 1.9-2.1 µm range at room temperature. The epitaxial technology of the structures was subjected to an optimisation procedure. The investigated layers and heterostructures can be considered for application in laser devices.

Słowa kluczowe

EN

MOCVD; antimonides; quantum wells; AlGaAsSb; InGaAsSb

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2011
• Tom: Vol. 19, No. 2
• Strony: 140--144
• Opis fizyczny: Bibliogr. 18 poz., il., wykr.

Twórcy

autor

Wesołowski M.

autor

Strupiński W.

autor

Motyka M.

autor

Sęk G.

autor

Dumiszewska E.

autor

Caban P.

autor

Jasik A.

autor

Wójcik A.

autor

Pierściński K.

autor

Pierścińska D.

• Institute of Electronic Materials Technology, 133 Wólczyńska Str., 01-919 Warsaw, Poland,

Bibliografia

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